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Modelos EDAEasyEDA
AOS AON3814
| Fabricante | |
| N.º de pieza fab. | AON3814 |
| Nº LCSC | C28433 |
| Emb. | DFN-8(3x3) |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH ARR 20V 6A DFN-8(2.5x3) |
| Hoja de Datos | AOS AON3814 |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | AOS | |
| Emb. | DFN-8(3x3) | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 200pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 17mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±12V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | AOS | |
| Emb. | DFN-8(3x3) | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 200pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 17mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±12V |
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Descripción
Traducción por IA
The AON3814 utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 1.8V while maintaining a VGS(MAX) rating of 12V. The device features ESD protection. With its common-drain configuration, this device is suitable for use as a unidirectional or bidirectional load switch.
Características
Traducción por IA
- Advanced trench technology
- Excellent RDS(ON)
- Low gate charge
- Operable at gate voltages as low as 1.8V
- 12V VGS(MAX) rating maintained
- ESD protection
En stock: 2,560
2,560 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.3072 | $ 1.54 |
| 50+ | $ 0.2535 | $ 12.68 |
| 150+ | $ 0.2304 | $ 34.56 |
| 500+ | $ 0.2017 | $ 100.85 |
| 3,000+ | $ 0.1889 | $ 566.70 |
| 6,000+ | $ 0.1812 | $ 1087.20 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | AOS | |
| Emb. | DFN-8(3x3) | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 200pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 17mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±12V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Fabricante | AOS | |
| Emb. | DFN-8(3x3) | |
| Operating Temperature | - | |
| Output Capacitance(Coss) | 200pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 17mΩ@4.5V | |
| Pd - Power Dissipation | 2.5W |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 13nC@4.5V | |
| Vgs | ±12V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The AON3814 utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 1.8V while maintaining a VGS(MAX) rating of 12V. The device features ESD protection. With its common-drain configuration, this device is suitable for use as a unidirectional or bidirectional load switch.
Características
Traducción por IA
- Advanced trench technology
- Excellent RDS(ON)
- Low gate charge
- Operable at gate voltages as low as 1.8V
- 12V VGS(MAX) rating maintained
- ESD protection
C28433 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| SI7232DN-T1-GE3-VB | VBsemi Elec | DFN3x3-8 | 5 | $0.8852 $1.0414 | ||
| AON3818 | AOS | DFN-8(3x3) | 195 | $ 0.2112 | ||
| CJBD3020 | JSCJ | PDFNWB-8(3x3) | 805 | $ 0.2418 | ||
| ESN4838 | ElecSuper | PDFN3x3-8L | 5,192 | $ 0.1673 | ||
| WSD6035DN33 | Winsok Semicon | DFN3X3-8L | 3,830 | $0.4848 $0.5386 | ||
| CSD87312Q3E | TI | VSON-8-EP(3x3) | 13 | $ 2.4126 | ||
| SIZF4800LDT-T1-GE3 | VISHAY | PowerPAIR(3x3) | 2 | $ 1.9027 | ||
| AON7804 | AOS | DFN-8(3x3) | 10,470 | $ 0.3468 | ||
| HSBE2730 | HUASHUO | PRPAK-EP(3x3) | 0 | $ 0.2866 | ||
| CJBM3020 | JSCJ | DFNWB-8-EP(3x3) | 0 | $ 0.3983 |