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EDA ModelsEasyEDA
onsemi MJ11032G
| Manufacturer | |
| MPN | MJ11032G |
| LCSC Part # | C2732 |
| Packaging | TO-204(TO-3) |
| Customer # | |
| Key Attributes | 120V 1000 50A NPN TO-204(TO-3) Single Bipolar Transistors RoHS |
| Datasheet | onsemi MJ11032G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Current - Collector Cutoff | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| Current - Collector(Ic) | 50A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Current - Collector Cutoff | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| Current - Collector(Ic) | 50A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3.5V |
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Introduction
AI Translation
High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.
Features
AI Translation
- High DC current gain — h_FE min. 1000 at I_C = 25 A DC
- h_FE min. 400 at I_C = 50 A DC
- Characterized to 100 A (pulsed)
- Diode protection to rated I_C
- Monolithic construction with built-in base-emitter shunt resistor
- Junction temperature up to +200°C
- Available in lead-free package
In-Stock: 107
107 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 14.5311 | $ 14.53 |
| 10+ | $ 12.821 | $ 128.21 |
| 30+ | $ 10.6915 | $ 320.75 |
| 100+ | $ 9.8185 | $ 981.85 |
Standard Packaging100/Full Tray | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Current - Collector Cutoff | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| Current - Collector(Ic) | 50A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-204(TO-3) | |
| Vbe Saturation(VBE(sat)) | 4.5V | |
| Operating Temperature | -55℃~+200℃@(Tj) | |
| Current - Collector Cutoff | - | |
| Vbe On(VBE(on)) | - | |
| Transition frequency(fT) | - |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 120V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 1000 | |
| Pd - Power Dissipation | 300W | |
| Current - Collector(Ic) | 50A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 3.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
High-current complementary silicon power transistors for use as output devices in complementary general-purpose amplifier applications.
Features
AI Translation
- High DC current gain — h_FE min. 1000 at I_C = 25 A DC
- h_FE min. 400 at I_C = 50 A DC
- Characterized to 100 A (pulsed)
- Diode protection to rated I_C
- Monolithic construction with built-in base-emitter shunt resistor
- Junction temperature up to +200°C
- Available in lead-free package
C2732 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MJ11032 | SPTECH | TO-3 | 17 | $6.1756 $6.5006 | ||
| MJ11032G-JSM | JSMSEMI | TO-3 | 161 | $2.2896 $2.4101 | ||
| NTE2349 | NTE Electronics | TO-3 | 0 | $ 39.4138 | ||
| MJ10021 | NTE Electronics | TO-3 | 0 | $ 39.9427 | ||
| NTE99 | NTE Electronics | TO-3 | 0 | $ 67.234 | ||
| MJ10015 | Solid State System | TO-3 | 0 | $ 14.9995 | ||
| MJ10016 | NTE Electronics | TO-3 | 0 | $ 26.362 | ||
| MJ10016 | Solid State System | TO-3 | 0 | $ 14.9985 | ||
| MJ10016 | SPTECH | TO-3 | 0 | $ 4.629 | ||
| MJ10015 | NTE Electronics | TO-3 | 0 | $ 26.3493 |