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Winsok Semicon WSK220N04
| Manufacturer | Winsok SemiconAsian Brands |
| MPN | WSK220N04 |
| LCSC Part # | C148446 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 220A TO-263 |
| Datasheet | Winsok Semicon WSK220N04 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 1.463nF | |
| Pd - Power Dissipation | 218W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 595pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.71nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 1.463nF | |
| Pd - Power Dissipation | 218W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 595pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.71nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WSK220N04 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSK220N04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
AI Translation
- Switching application
- Power Management for Inverter Systems
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 827
827 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.3091 | $ 1.31 |
| 10+ | $ 1.089 | $ 10.89 |
| 30+ | $ 0.9691 | $ 29.07 |
| 100+ | $ 0.8344 | $ 83.44 |
| 500+ | $ 0.7736 | $ 386.80 |
| 800+ | $ 0.7457 | $ 596.56 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 1.463nF | |
| Pd - Power Dissipation | 218W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 595pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.71nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Winsok Semicon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 1.463nF | |
| Pd - Power Dissipation | 218W | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 220A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 595pF | |
| RDS(on) | 3.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.71nF | |
| Gate Charge(Qg) | 156nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The WSK220N04 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSK220N04 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Applications
AI Translation
- Switching application
- Power Management for Inverter Systems
C148446 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WSK40200 | Winsok Semicon | TO-263-2L | 0 | $ 2.1144 |