onsemi HUF75329D3ST
| Fabricante | |
| Cód. da peça | HUF75329D3ST |
| Nº LCSC | C903777 |
| Emb. | TO-252AA |
| Número do Cliente | |
| Atrib. princ. | 128W 55V 20A 4V 22mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS |
| Folha de Dados | onsemi HUF75329D3ST |
| Conformidade RoHS | 4 documentos disponíveis |
| Peças alternativas | 10 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252AA | |
| Output Capacitance(Coss) | 405pF | |
| Pd - Power Dissipation | 128W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 65nC@20V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252AA | |
| Output Capacitance(Coss) | 405pF | |
| Pd - Power Dissipation | 128W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 65nC@20V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrição
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering superior performance. The devices can withstand high energy in avalanche mode, with diodes featuring ultra-short reverse recovery time and minimal stored charge. Designed for applications demanding high power efficiency, including switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Recursos
- 20A, 55V
- Simulation Models
- Temperature-compensated PSPICE and SABER models
- SPICE and SABER thermal impedance models available online
Aplicações
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 1.1927 | $ 1.19 |
| 200+ | $ 0.4621 | $ 92.42 |
| 500+ | $ 0.4452 | $ 222.60 |
| 1,000+ | $ 0.4375 | $ 437.50 |
Encapsulamento Padrão2500/Full Reel | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252AA | |
| Output Capacitance(Coss) | 405pF | |
| Pd - Power Dissipation | 128W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 65nC@20V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-252AA | |
| Output Capacitance(Coss) | 405pF | |
| Pd - Power Dissipation | 128W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 20A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.06nF | |
| Gate Charge(Qg) | 65nC@20V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrição
These N-channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per unit silicon area, delivering superior performance. The devices can withstand high energy in avalanche mode, with diodes featuring ultra-short reverse recovery time and minimal stored charge. Designed for applications demanding high power efficiency, including switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-powered products.
Recursos
- 20A, 55V
- Simulation Models
- Temperature-compensated PSPICE and SABER models
- SPICE and SABER thermal impedance models available online
Aplicações
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
C903777 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|
| NTD24N06T4G | onsemi | DPAK | 100 | $ 2.845 | ||
| STD35NF06T4 | ST | DPAK | 63 | $ 1.0145 | ||
| IRFR2405TR(UMW) | UMW | TO-252 | 420 | $ 0.2642 | ||
| IRFR540ZTRPBF | Infineon | DPAK(TO-252AA) | 2,317 | $ 1.5373 | ||
| IRFR540ZTRLPBF | Infineon | DPAK | 782 | $ 0.9394 | ||
| CMD045N15 | Cmos | TO-252 | 994 | $0.5683 $0.5982 | ||
| IRFR1205TR(UMW) | UMW | TO-252 | 1,800 | $ 0.2109 | ||
| IRFR1205TRPBF | Infineon | TO-252 | 1,194 | $ 0.7277 | ||
| JCS50N06RH | Jilin Sino-Microelectronics | DPAK | 0 | $ 0.3833 | ||
| STD26NF10 | ST | TO-252-2(DPAK) | 0 | $ 1.5653 |