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Modèles EDAEasyEDA
onsemi NVMFS016N06CT1G
| Fabricant | |
| Réf. Fab. | NVMFS016N06CT1G |
| Réf. LCSC | C900405 |
| Condit. | SO-8-FL-5.8mm |
| Numéro Client | |
| Caract. clés | 36W 60V 33A 4V 13mΩ@10V 1 N-channel N-Channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS |
| Fiche Technique | onsemi NVMFS016N06CT1G |
| Conformité RoHS | 4 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SO-8-FL-5.8mm | |
| Output Capacitance(Coss) | 319pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 489pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SO-8-FL-5.8mm | |
| Output Capacitance(Coss) | 319pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 489pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVMFWS016N06C - solderable flank option for enhanced optical inspection
- AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
Traduction par IA
- Power tools, battery-powered vacuum cleaners - Drones, material handling equipment - Battery Management Systems (BMS)/energy storage, smart home
Rupture de stock
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Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 1.0792 | $ 1.08 |
| 10+ | $ 0.8983 | $ 8.98 |
| 30+ | $ 0.7987 | $ 23.96 |
| 100+ | $ 0.6852 | $ 68.52 |
| 500+ | $ 0.6346 | $ 317.30 |
| 1,500+ | $ 0.6116 | $ 917.40 |
Boîtier Standard1500/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SO-8-FL-5.8mm | |
| Output Capacitance(Coss) | 319pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 489pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | onsemi | |
| Condit. | SO-8-FL-5.8mm | |
| Output Capacitance(Coss) | 319pF | |
| Pd - Power Dissipation | 36W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 33A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 489pF | |
| Gate Charge(Qg) | 6.9nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Compact 5x6 mm package for space-constrained designs
- Low on-resistance RDS(on) for minimized conduction losses
- Low gate charge QG and capacitance for minimized driving losses
- NVMFWS016N06C - solderable flank option for enhanced optical inspection
- AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
Traduction par IA
- Power tools, battery-powered vacuum cleaners - Drones, material handling equipment - Battery Management Systems (BMS)/energy storage, smart home
C900405 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| NTMFS016N06CT1G | onsemi | SO-8-FL-5.9mm | 90 | $ 1.9366 | ||
| LN7612HDT1WG | LRC | DFN5060-8B | 2,849 | $ 0.59 | ||
| SED10070GG | SINO-IC | DFN-8(5x6) | 1,396 | $ 0.5425 | ||
| FDMS86200-TP | TECH PUBLIC | PDFN-8(5x6) | 4,954 | $ 0.6973 | ||
| BSC190N15NS3G-TP | TECH PUBLIC | PDFN-8(5x6) | 3,653 | $ 0.7705 | ||
| NVMFWS014N08XT1G | onsemi | SO-8FL | 0 | $ 1.74 | ||
| SIR5112DP-T1-RE3 | VISHAY | PowerPAKSO-8 | 0 | $ 1.9691 | ||
| NCEP1580GU | NCE | DFN-8(5.1x5.8) | 0 | $ 1.1142 | ||
| TSM130NB06CR RLG | Taiwan Semiconductor | PDFN-8(5.2x5.8) | 0 | $ 0.3946 | ||
| RS1P600BETB1 | ROHM | HSOP-8 | 0 | $ 1.3048 |