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onsemi NVMFD5489NLWFT1G
| Manufacturer | |
| MPN | NVMFD5489NLWFT1G |
| LCSC Part # | C900376 |
| Packaging | DFN-8(4.9x5.9) |
| Customer # | |
| Key Attributes | 60V 12A 2.5V 23.4W 52mΩ@10V 2 N-Channel DFN-8(4.9x5.9) Single FETs, MOSFETs |
| Datasheet | onsemi NVMFD5489NLWFT1G |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 23.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 12.4nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 23.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 12.4nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low capacitance minimizing switching losses
- Operating temperature up to 175°C
- NVMFD5489NLWF – solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free device
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 23.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 12.4nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | DFN-8(4.9x5.9) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 23.4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF | |
| RDS(on) | 52mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 12.4nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low on-resistance RDS(on) minimizing conduction losses
- Low capacitance minimizing switching losses
- Operating temperature up to 175°C
- NVMFD5489NLWF – solderable flank option for optical inspection
- AEC-Q101 qualified, PPAP documentation available
- Lead-free device
C900376 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |