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onsemi BUB323ZT4G
| Manufacturer | |
| MPN | BUB323ZT4G |
| LCSC Part # | C898498 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 350V 500 10A NPN D2PAK Single Bipolar Transistors RoHS |
| Datasheet | onsemi BUB323ZT4G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Vbe Saturation(VBE(sat)) | 2.2V;2.5V | |
| Operating Temperature | -65℃~+175℃@(Tj) | |
| Current - Collector Cutoff | 100uA | |
| Vbe On(VBE(on)) | 2.1V;2.3V | |
| Transition frequency(fT) | 2MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 500 | |
| Pd - Power Dissipation | 150W | |
| Current - Collector(Ic) | 10A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.7V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Vbe Saturation(VBE(sat)) | 2.2V;2.5V | |
| Operating Temperature | -65℃~+175℃@(Tj) | |
| Current - Collector Cutoff | 100uA | |
| Vbe On(VBE(on)) | 2.1V;2.3V | |
| Transition frequency(fT) | 2MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 350V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 500 | |
| Pd - Power Dissipation | 150W | |
| Current - Collector(Ic) | 10A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.7V |
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Introduction
AI Translation
BUB323Z is a planar, monolithic, high-voltage power Darlington transistor with an integrated active Zener clamp circuit. The device is designed for unclamped inductive applications such as electronic ignition, switching regulators, and motor control.
Features
AI Translation
- Integrated high-voltage active clamp
- Guaranteed narrow clamp voltage window (350 V to 450 V) over -40°C to +125°C temperature range
- 100% production testing of clamp energy capability in actual ignition circuits
- High DC current gain/low saturation voltage specified over full temperature range
- Design guaranteed to always operate within safe operating area (SOA)
- NJV prefix for automotive and other applications requiring specific place of manufacture and controlled change requirements; AEC-Q101 qualified with PPAP capability
- These devices are lead-free, halogen-free/BFR-free, and RoHS compliant
Applications
AI Translation
- Electronic ignition
- Switching regulators
- Motor control
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In-Stock: 32
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0654 | $ 2.07 |
| 10+ | $ 2.0182 | $ 20.18 |
| 30+ | $ 1.9856 | $ 59.57 |
| 100+ | $ 1.9531 | $ 195.31 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Vbe Saturation(VBE(sat)) | 2.2V;2.5V | |
| Operating Temperature | -65℃~+175℃@(Tj) | |
| Current - Collector Cutoff | 100uA | |
| Vbe On(VBE(on)) | 2.1V;2.3V | |
| Transition frequency(fT) | 2MHz | |
| Collector - Emitter Voltage VCEO | 350V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 500 | |
| Pd - Power Dissipation | 150W | |
| Current - Collector(Ic) | 10A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.7V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Vbe Saturation(VBE(sat)) | 2.2V;2.5V | |
| Operating Temperature | -65℃~+175℃@(Tj) | |
| Current - Collector Cutoff | 100uA | |
| Vbe On(VBE(on)) | 2.1V;2.3V | |
| Transition frequency(fT) | 2MHz |
| Type | Description | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 350V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 500 | |
| Pd - Power Dissipation | 150W | |
| Current - Collector(Ic) | 10A | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.7V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
BUB323Z is a planar, monolithic, high-voltage power Darlington transistor with an integrated active Zener clamp circuit. The device is designed for unclamped inductive applications such as electronic ignition, switching regulators, and motor control.
Features
AI Translation
- Integrated high-voltage active clamp
- Guaranteed narrow clamp voltage window (350 V to 450 V) over -40°C to +125°C temperature range
- 100% production testing of clamp energy capability in actual ignition circuits
- High DC current gain/low saturation voltage specified over full temperature range
- Design guaranteed to always operate within safe operating area (SOA)
- NJV prefix for automotive and other applications requiring specific place of manufacture and controlled change requirements; AEC-Q101 qualified with PPAP capability
- These devices are lead-free, halogen-free/BFR-free, and RoHS compliant
Applications
AI Translation
- Electronic ignition
- Switching regulators
- Motor control
C898498 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| BUB941ZTT4 | ST | Similar | D2PAK | 10 | $ 2.7067 | ||
| MN638SVL-RP | SPTECH | Similar | D2PAK | 75 | $1.3172 $1.3865 | ||
| BU941ZL-TQ2-R | UTC | Similar | TO-263 | 0 | $ 0.7759 |
3 more alternative parts.View all substitutes