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onsemi FDH3632
| Manufacturer | |
| MPN | FDH3632 |
| LCSC Part # | C898141 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 80A TO-247 |
| Datasheet | onsemi FDH3632 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 310W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6nF | |
| Gate Charge(Qg) | 84nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 310W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6nF | |
| Gate Charge(Qg) | 84nC@10V |
Introduction
SuperFET II MOSFETs are a new family of high-voltage super junction (SJ) MOSFETs that leverage charge balance technology to achieve excellent low on-resistance and reduced gate charge performance. This advanced technology is specifically designed to minimize conduction losses, deliver superior switching performance, and withstand extreme dv/dt ratings and higher avalanche energy. As a result, SuperFET II MOSFETs are well-suited for a wide range of AC-DC power conversion applications where system miniaturization and high efficiency are required.
Features
- RDS(ON)=7.5 mΩ (Typ.), VGS=10 Vz , ID=80 A
- Qg(tot)=84 nC (Typ.), VGS=10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 7.5838 | $ 7.58 |
| 10+ | $ 6.8251 | $ 68.25 |
| 30+ | $ 6.3734 | $ 191.20 |
| 90+ | $ 5.9169 | $ 532.52 |
| 450+ | $ 5.7074 | $ 2568.33 |
| 900+ | $ 5.6115 | $ 5050.35 |
Standard Packaging30/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 310W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6nF | |
| Gate Charge(Qg) | 84nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 310W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6nF | |
| Gate Charge(Qg) | 84nC@10V |
Introduction
SuperFET II MOSFETs are a new family of high-voltage super junction (SJ) MOSFETs that leverage charge balance technology to achieve excellent low on-resistance and reduced gate charge performance. This advanced technology is specifically designed to minimize conduction losses, deliver superior switching performance, and withstand extreme dv/dt ratings and higher avalanche energy. As a result, SuperFET II MOSFETs are well-suited for a wide range of AC-DC power conversion applications where system miniaturization and high efficiency are required.
Features
- RDS(ON)=7.5 mΩ (Typ.), VGS=10 Vz , ID=80 A
- Qg(tot)=84 nC (Typ.), VGS=10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
C898141 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SP020N08GHTF | Siliup | TO-247 | 68 | $2.1979 $2.3135 | ||
| IXTX90N25L2 | OSEN | TO-247S | 28 | $ 1.9817 | ||
| MDQ20N116PTFTH | MagnaChip Semicon | TO-247 | 121 | $ 1.7338 | ||
| SP16MF30TF | Siliup | TO-247 | 40 | $ 3.5083 | ||
| IRF200P222-VB | VBsemi Elec | TO-247 | 34 | $4.0007 $4.2112 | ||
| JSM90N20P | JSMSEMI | TO-247 | 88 | $2.5408 $2.6745 | ||
| IXTQ82N25P-JSM | JSMSEMI | TO-247 | 62 | $2.7702 $2.916 | ||
| NCEP02T10T | NCE | TO-247-3L | 0 | $ 2.6316 | ||
| VBGP1121N | VBsemi Elec | TO-247 | 0 | $ 8.3215 | ||
| HYG065N15NS1W | HUAYI | TO-247A-3L | 0 | $ 2.9049 |