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Modèles EDAEasyEDA
onsemi 2N6341G
| Fabricant | |
| Réf. Fab. | 2N6341G |
| Réf. LCSC | C897794 |
| Condit. | TO-204-2 |
| Numéro Client | |
| Caract. clés | 150V 120 25A NPN 1 NPN TO-204-2 Single Bipolar Transistors RoHS |
| Fiche Technique | onsemi 2N6341G |
| Conformité RoHS | 3 documents disponibles |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | TO-204-2 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| DC Current Gain | 120 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 25A | |
| Pd - Power Dissipation | 200W | |
| Configuration | Standalone | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 1V;1.8V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | TO-204-2 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| DC Current Gain | 120 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 25A | |
| Pd - Power Dissipation | 200W | |
| Configuration | Standalone | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 1V;1.8V |
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 10.6268 | $ 10.63 |
| 200+ | $ 4.1134 | $ 822.68 |
| 500+ | $ 3.9683 | $ 1984.15 |
| 1,000+ | $ 3.8973 | $ 3897.30 |
Boîtier Standard100/Full Tray | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | TO-204-2 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| DC Current Gain | 120 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 25A | |
| Pd - Power Dissipation | 200W | |
| Configuration | Standalone | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 1V;1.8V |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | TO-204-2 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+200℃ | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| DC Current Gain | 120 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 25A | |
| Pd - Power Dissipation | 200W | |
| Configuration | Standalone | |
| type | NPN | |
| Number | 1 NPN | |
| Vce Saturation(VCE(sat)) | 1V;1.8V |
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C897794 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Détails |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |