onsemi SMMUN2213LT3G
| Manufacturer | |
| MPN | SMMUN2213LT3G |
| LCSC Part # | C896915 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 50V 80 100mA 246mW NPN 1 NPN (Pre-Biased) SOT-23 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | onsemi SMMUN2213LT3G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 61.1kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 61.1kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT integrates these discrete components into a single device, eliminating the need for them. Using BRTs reduces system cost and saves board space.
Features
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2756 | $ 1.38 |
| 50+ | $ 0.2716 | $ 13.58 |
| 150+ | $ 0.269 | $ 40.35 |
| 500+ | $ 0.2663 | $ 133.15 |
Standard Packaging10000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 61.1kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,0.3mA | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 61.1kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 246mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@2mA,0.3V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Introduction
This series of digital transistors is designed to replace discrete devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT integrates these discrete components into a single device, eliminating the need for them. Using BRTs reduces system cost and saves board space.
Features
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C896915 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| MUN2213T1G | onsemi | SC-59 | 15 | $ 0.4264 | ||
| PDTC144ET,215 | Nexperia | SOT-23 | 18,260 | $ 0.0222 | ||
| PDTC144ET-QR | Nexperia | SOT-23 | 2,900 | $ 0.0232 | ||
| MMUN2213LT1G | onsemi | SOT-23 | 305 | $ 0.1092 | ||
| SMMUN2213LT1G | onsemi | SOT-23 | 125 | $ 0.1988 | ||
| MMUN2236LT1G | onsemi | SOT-23 | 995 | $ 0.1344 | ||
| PDTC144EU-QX | Nexperia | SOT-23 | 0 | $ 0.0614 | ||
| SMUN2213T1G | onsemi | SC-59 | 0 | $ 0.0611 | ||
| NSVMUN2236T1G | onsemi | SC-59-3 | 0 | $ 0.0382 | ||
| MUN2236T1G | onsemi | SC-59 | 0 | $ 0.0411 |



