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Modèles EDAEasyEDA
onsemi MUN5231T1G
| Fabricant | |
| Réf. Fab. | MUN5231T1G |
| Réf. LCSC | C891830 |
| Condit. | SC-70-3 |
| Numéro Client | |
| Caract. clés | 50V 8 100mA 202mW NPN 1 NPN (Pre-Biased) SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Fiche Technique | onsemi MUN5231T1G |
| Conformité RoHS | 3 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Caractéristiques
Traduction par IA
- Simplified circuit design
- PCB space saving
- Reduced component count
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 compliant with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
Rupture de stock
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Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.0216 | $ 0.02 |
| 200+ | $ 0.0084 | $ 1.68 |
| 500+ | $ 0.0081 | $ 4.05 |
| 1,000+ | $ 0.008 | $ 8.00 |
Boîtier Standard3000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Fabricant | onsemi | |
| Condit. | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V | |
| Operating temperature | -55℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors — a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Caractéristiques
Traduction par IA
- Simplified circuit design
- PCB space saving
- Reduced component count
- NSV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 compliant with PPAP capability
- Lead-free, halogen-free/BFR-free, and RoHS compliant
C891830 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Détails |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| PDTC124XU,115 | Nexperia | SOT-323 | 10 | $ 0.3485 | ||
| MUN5230T1G | onsemi | SC-70-3 | 0 | $ 0.0659 | ||
| PDTC123EU,115 | Nexperia | SOT-323-3 | 0 | $ 0.0331 | ||
| NSVMUN5234T1G | onsemi | SC-70-3 | 0 | $ 0.0909 | ||
| MUN5215T1G | onsemi | SOT-323(SC-70) | 0 | $ 0.0198 | ||
| DTC043EUBTL | ROHM | SOT-323 | 0 | $ 0.0329 | ||
| SMUN5215T1G | onsemi | SC-70-3 | 0 | $ 0.0569 | ||
| DDTC124EUAQ-7-F | DIODES | SOT-323 | 0 | $ 0.0632 | ||
| DDTD142JU-7-F | DIODES | SOT-323 | 0 | $ 0.0273 | ||
| DDTD113ZU-7-F | DIODES | SOT-323 | 0 | $ 0.151 |