TI UCC28C59QDRQ1

The UCC28C5x-Q1 family of devices are high performance current-mode PWM controllers which can be used to drive both Si and SiC MOSFETs in various applications. The UCC28C5x-Q1 family is a more efficient and robust version of the UCC28C4xQ1. The UCC28C5x-Q1 family has new UVLO thresholds that allow for reliable SiC MOSFET operation (UCC28C56 - 59 - Q1), in addition to existing UVLO thresholds for continued Si MOSFET support (UCC28C50 - 55 - Q1). VDD absolute maximum voltage rating is extended from 20V to 30V for optimally driving the gate of 20 - Vgs, 18 - Vgs, or 15 - Vgs SiC MOSFETs, while also allowing for the exclusion of an external LDO.

• Undervoltage lockout options to support both Si and SiC MOSFET applications
• 30 - V VDD absolute maximum voltage
• 1 - MHz maximum Fixed frequency operation
• 50 - μA startup current, 75 - μA maximum
• Low operating current: 1.3 mA at f_OSC = 52 kHz
• High operating T_J: 150°C maximum
• Fast 35 - ns cycle - by - cycle over - current limiting
• ±1 - A peak driving current
• Rail - to - rail output:
  • 25 - ns rise time 20 - ns fall time
• ±1% accurate 2.5 - V error amplifier reference
• Pin - to - pin compatible and drop - in replacement for UCC28C4x - Q1
• Functional Safety - Capable
  • Documentation available to aid functional safety system design
• AEC - Q100 qualified with the following results
  • Device temperature grade 1: - 40°C to 125°C
  • Device HBM classification level 2: ±2 kV
  • Device CDM classification level C4B: 750 V

• Traction inverter HV to LV backup supply
• OBC and DC/DC converter isolated bias power supply
• HVAC compressor HV isolated power supply
• Single - ended DC converters in AC and DC EV charging equipment