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EDA-ModelleEasyEDA
VISHAY IRF9Z10PBF
| Hersteller | |
| Herst.-Teilenr. | IRF9Z10PBF |
| LCSC-Nr. | C727786 |
| Verp. | TO-220AB |
| Kundennummer | |
| Hauptmerkm. | 60V 4.7A 2V 43W 500mΩ@10V 1 P-Channel TO-220AB Single FETs, MOSFETs RoHS |
| Datenblatt |  VISHAY IRF9Z10PBF |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternative Teile | 10 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V |
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Beschreibung
KI-Übersetzung
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB a broadly recognized standard throughout the industry.
Merkmale
KI-Übersetzung
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-Channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
Vorrätig: 53
53 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.1242 | $ 3.12 |
| 10+ | $ 2.7554 | $ 27.55 |
| 50+ | $ 2.5247 | $ 126.24 |
| 100+ | $ 2.2875 | $ 228.75 |
| 500+ | $ 2.1803 | $ 1090.15 |
| 1,000+ | $ 2.1348 | $ 2134.80 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VISHAY | |
| Verp. | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 43W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 500mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 270pF | |
| Gate Charge(Qg) | 12nC@10V |
Fehler meldenÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The third-generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB a broadly recognized standard throughout the industry.
Merkmale
KI-Übersetzung
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-Channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
C727786 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| FQPF17P06-VB | VBsemi Elec | TO-220 | 7 | $0.5520 $0.6494 | ||
| NTP2955G-VB | VBsemi Elec | TO-220AB | 30 | $0.5720 $0.6729 | ||
| DOP10P10 | DOINGTER | TO-220 | 2,230 | $ 0.2003 | ||
| PH300PG-B | DOINGTER | TO-220 | 190 | $ 0.2628 | ||
| IRF9Z14PBF | VISHAY | TO-220AB-3 | 0 | $ 0.7574 | ||
| IRF9Z14PBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.2265 | ||
| IRF9Z10PBF-BE3 | VISHAY | TO-220AB | 0 | $ 0.8549 | ||
| SFP9Z14 | onsemi | TO-220-3 | 0 | $ 0.3202 | ||
| RFP8P10 | onsemi | TO-220AB | 0 | $ 0.276 | ||
| IRFI9640GPBF | VISHAY | TO-220-3 | 0 | $ 2.6839 |