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DIODES DMN3066LQ-7 product image
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DIODES DMN3066LQ-7

Manufacturer
DIODES
MPN
DMN3066LQ-7
LCSC Part #
C7264653
Packaging
SOT-23-3
Customer #
Key Attributes
30V 3.6A 1.5V 810mW 67mΩ@4.5V SOT-23-3 Single FETs, MOSFETs RoHS
DatasheetDIODES DMN3066LQ-7
In-Stock: 101
101 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.2444$ 0.24
10+$ 0.2378$ 2.38
30+$ 0.2346$ 7.04
100+$ 0.2296$ 22.96
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingSOT-23-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.6A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation810mW
RDS(on)67mΩ@4.5V
Number-
Input Capacitance(Ciss)353pF
Gate Charge(Qg)4.1nC@4.5V
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Introduction

AI Translation

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Features

AI Translation
  • High-speed switching
  • Low gate charge: QSW = 5.2 nC (typical)
  • Low output charge: Qoss = 14 nC (typical)
  • Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typical) (VGS = 10 V)
  • Low leakage current: IDSS = 10 μA (maximum) (VDS = 30 V)
  • Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.2 mA)

Applications

AI Translation
  • Load Switch