KIA Semicon Tech KNY2803A
| Fabricant | KIA Semicon TechAsian Brands |
| Réf. Fab. | KNY2803A |
| Réf. LCSC | C709678 |
| Condit. | DFN-8(5x6) |
| Numéro Client | |
| Caract. clés | MOSFET 30V 150A DFN-8(5x6) |
| Fiche Technique | KIA Semicon Tech KNY2803A |
| Pièces alternatives | 4 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | KIA Semicon Tech | |
| Condit. | DFN-8(5x6) | |
| Output Capacitance(Coss) | 715pF | |
| Pd - Power Dissipation | 50W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 605pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.35nF | |
| Gate Charge(Qg) | 110nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | KIA Semicon Tech | |
| Condit. | DFN-8(5x6) | |
| Output Capacitance(Coss) | 715pF | |
| Pd - Power Dissipation | 50W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 605pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.35nF | |
| Gate Charge(Qg) | 110nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- RDS(on)=2.2mΩ (typ.) @ VGS = 10V
- Low On-Resistance
- Fast Switching
- 100% Avalanche Tested
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Designed by the trench processing techniques to achieve extremely low on-resistance
- 175°C junction operating temperature
- Fast switching speed
- Improved repetitive avalanche rating
En stock: 1
1 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 0.4427 | $ 0.44 |
| 10+ | $ 0.3507 | $ 3.51 |
| 30+ | $ 0.3126 | $ 9.38 |
| 100+ | $ 0.2634 | $ 26.34 |
| 500+ | $ 0.2412 | $ 120.60 |
| 1,000+ | $ 0.2269 | $ 226.90 |
Boîtier Standard5000/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | KIA Semicon Tech | |
| Condit. | DFN-8(5x6) | |
| Output Capacitance(Coss) | 715pF | |
| Pd - Power Dissipation | 50W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 605pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.35nF | |
| Gate Charge(Qg) | 110nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | KIA Semicon Tech | |
| Condit. | DFN-8(5x6) | |
| Output Capacitance(Coss) | 715pF | |
| Pd - Power Dissipation | 50W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 150A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 605pF | |
| RDS(on) | 2.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.35nF | |
| Gate Charge(Qg) | 110nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- RDS(on)=2.2mΩ (typ.) @ VGS = 10V
- Low On-Resistance
- Fast Switching
- 100% Avalanche Tested
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Designed by the trench processing techniques to achieve extremely low on-resistance
- 175°C junction operating temperature
- Fast switching speed
- Improved repetitive avalanche rating
C709678 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
