- Rozkład pinów
- Obudowa
onsemi NDP6020P
| Producent | |
| Nr części prod. | NDP6020P |
| Nr LCSC | C68561 |
| Opak. | TO-220 |
| Numer Klienta | |
| Klucz. cechy | 20V 24A 700mV 60W 50mΩ@4.5V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  onsemi NDP6020P |
| Zgodność z dyrektywą RoHS | Dostępnych dokumentów: 3 |
| Części alternatywne | 10 |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.59nF | |
| Gate Charge(Qg) | 35nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.59nF | |
| Gate Charge(Qg) | 35nC@10V |
Opis
These logic-level P-channel enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in both avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits requiring fast switching, low line power loss, and immunity to transients.
Funkcje
- RDS(ON) = 0.07 Ω at VGS = -2.7 V
- RDS(ON) = 0.075 Ω at VGS = -2.5 V
- -24 A, -20 V, RDS(ON) = 0.05 Ω at VGS = -4.5 V
- Key DC electrical parameters specified at elevated temperature
- Robust internal source-drain diode eliminates need for external Zener diode transient suppressors
- Maximum junction temperature rating of 175°C
- High-density cell design for ultra-low RDS(ON)
- Available in TO-220 and TO-263 (D2PAK) packages for through-hole and SMT applications
Zastosowania
- Automotive
- DC/DC Converters
- PWM Motor Control
- Other Battery-Powered Circuits
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 2.1884 | $ 2.19 |
| 10+ | $ 1.9334 | $ 19.33 |
| 50+ | $ 1.7936 | $ 89.68 |
| 100+ | $ 1.6344 | $ 163.44 |
| 500+ | $ 1.5646 | $ 782.30 |
| 1,000+ | $ 1.5337 | $ 1533.70 |
Standardowa Obudowa50/Full Tube | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.59nF | |
| Gate Charge(Qg) | 35nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | TO-220 | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 24A | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF | |
| RDS(on) | 50mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.59nF | |
| Gate Charge(Qg) | 35nC@10V |
Opis
These logic-level P-channel enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in both avalanche and commutation modes. These devices are particularly suited for low-voltage applications such as automotive, DC/DC converters, PWM motor control, and other battery-powered circuits requiring fast switching, low line power loss, and immunity to transients.
Funkcje
- RDS(ON) = 0.07 Ω at VGS = -2.7 V
- RDS(ON) = 0.075 Ω at VGS = -2.5 V
- -24 A, -20 V, RDS(ON) = 0.05 Ω at VGS = -4.5 V
- Key DC electrical parameters specified at elevated temperature
- Robust internal source-drain diode eliminates need for external Zener diode transient suppressors
- Maximum junction temperature rating of 175°C
- High-density cell design for ultra-low RDS(ON)
- Available in TO-220 and TO-263 (D2PAK) packages for through-hole and SMT applications
Zastosowania
- Automotive
- DC/DC Converters
- PWM Motor Control
- Other Battery-Powered Circuits
C68561 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| 2SJ140-VB | VBsemi Elec | TO-220AB | 10 | $0.5952 $0.7002 | ||
| IRF9521PBF-VB | VBsemi Elec | TO-220AB | 7 | $0.5723 $0.6732 | ||
| IRF5305PBF-JSM | JSMSEMI | TO-220-3L | 57 | $0.5388 $0.5671 | ||
| XR30P10HT | XNRUSEMI | TO-220 | 85 | $0.3585 $0.3773 | ||
| IRF5210PBF-JSM | JSMSEMI | TO-220-3L | 187 | $0.8959 $0.943 | ||
| CMP5940B | Cmos | TO-220 | 103 | $0.4158 $0.4376 | ||
| WSR58P06 | Winsok Semicon | TO-220 | 105 | $0.6806 $0.8006 | ||
| GT700P08T | GOFORD | TO-220 | 28 | $ 0.4208 | ||
| IPP45P03P4L11AKSA1 | Infineon | TO-220 | 0 | $ 1.3697 | ||
| 2SJ349-VB | VBsemi Elec | TO-220 | 0 | $1.0230 $1.0768 |