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PANJIT PJP60R540E_T0_00001 product image
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PANJIT PJP60R540E_T0_00001

Manufacturer
PANJITAsian Brands
MPN
PJP60R540E_T0_00001
LCSC Part #
C6628482
Packaging
TO-220AB
Customer #
Key Attributes
600V 4V 94W 535mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS
DatasheetPANJIT PJP60R540E_T0_00001
Alternative Parts5
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.855$ 1.86
200+$ 0.7411$ 148.22
500+$ 0.7154$ 357.70
1,000+$ 0.7032$ 703.20
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerPANJIT
PackagingTO-220AB
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)1.3A;9A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation94W
RDS(on)535mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)531pF
Gate Charge(Qg)23.7nC@10V

Introduction

AI Translation

NextPower 100 V standard-level gate drive MOSFET. Operable at 175°C ambient temperature, suitable for industrial and consumer applications.

Features

AI Translation
  • RDS(ON) < 0.535 Ω at VGS = 10 V, ID = 2.8 A
  • Fast switching speed
  • Low RDS(ON)
  • Low noise
  • Lead-free, RoHS 2.0 compliant
  • Green molding compound per IEC 61249

Applications

AI Translation
  • AC-DC and DC-DC synchronous rectifiers
  • Brushless DC (BLDC) motor control
  • USB-PD and mobile fast chargers
  • LED lighting
  • Full-bridge and half-bridge applications
  • Flyback and resonant topologies

Alternative Parts

MPNManufacturerAlternative TypePackagingAvailabilityUnit Price
STP10NM60NSTSimilarTO-2205$ 4.7277
NTP360N80S3ZonsemiSimilarTO-22010$ 4.5376
HMS8N70-VBVBsemi ElecSimilarTO-220AB8$1.1024 $1.2969
FQPF16N60-VBVBsemi ElecSimilarTO-220AB18$1.4678 $1.7268
12N60 TO220-VBVBsemi ElecSimilarTO-220AB8$1.4508 $1.7068
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