Taiwan Semiconductor TSM7P06CP ROG
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM7P06CP ROG |
| LCSC Part # | C6561152 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | 60V 2.5V 15.6W 180mΩ@10V TO-252(DPAK) Single FETs, MOSFETs RoHS |
| Datasheet | Taiwan Semiconductor TSM7P06CP ROG |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 15.6W | |
| RDS(on) | 180mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 8.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15.6W | |
| RDS(on) | 180mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 8.2nC@10V |
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Out of Stock
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.2439 | $ 0.24 |
| 200+ | $ 0.0973 | $ 19.46 |
| 500+ | $ 0.0941 | $ 47.05 |
| 1,000+ | $ 0.0925 | $ 92.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 15.6W | |
| RDS(on) | 180mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 8.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15.6W | |
| RDS(on) | 180mΩ@10V | |
| Number | - | |
| Input Capacitance(Ciss) | 425pF | |
| Gate Charge(Qg) | 8.2nC@10V |
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C6561152 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

