Ampleon BLC8G22LS-450AVZ
| Fabricant | |
| Réf. Fab. | BLC8G22LS-450AVZ |
| Réf. LCSC | C6470716 |
| Condit. | DFM6 |
| Numéro Client | |
| Caract. clés | 65V DFM6 Single FETs, MOSFETs RoHS |
| Fiche Technique | Ampleon BLC8G22LS-450AVZ |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Ampleon | |
| Condit. | DFM6 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Ampleon | |
| Condit. | DFM6 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
450 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 2110 MHz to 2170 MHz.
Caractéristiques
Traduction par IA
- Excellent ruggedness
- High efficiency
- Low thermal resistance with superior thermal stability
- Low output capacitance for enhanced performance in Doherty applications
- Designed for low memory effects with excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant with RoHS Directive 2002/95/EC
Applications
Traduction par IA
- RF power amplifier for base station and multi-carrier applications in the 2110 MHz to 2170 MHz frequency range
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Minimum: 1Multiple: 1Unité de vente: Piece
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 261.731 | $ 261.73 |
| 200+ | $ 104.4336 | $ 20886.72 |
| 500+ | $ 100.9434 | $ 50471.70 |
| 1,000+ | $ 99.2187 | $ 99218.70 |
Boîtier Standard20/Full Tray | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Ampleon | |
| Condit. | DFM6 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Ampleon | |
| Condit. | DFM6 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 65V | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | - | |
| Number | - | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
450 W LDMOS packaged asymmetric Doherty power transistor for base station applications, operating frequency range 2110 MHz to 2170 MHz.
Caractéristiques
Traduction par IA
- Excellent ruggedness
- High efficiency
- Low thermal resistance with superior thermal stability
- Low output capacitance for enhanced performance in Doherty applications
- Designed for low memory effects with excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant with RoHS Directive 2002/95/EC
Applications
Traduction par IA
- RF power amplifier for base station and multi-carrier applications in the 2110 MHz to 2170 MHz frequency range
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

