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MICROCHIP TN5325K1-G
| Fabricant | |
| Réf. Fab. | TN5325K1-G |
| Réf. LCSC | C626653 |
| Condit. | SOT-23-3 |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 250V SOT-23-3 |
| Fiche Technique | MICROCHIP TN5325K1-G |
| Conformité RoHS | 2 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 150mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 150mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Type | N-Channel |
Description
The TN5325 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Caractéristiques
- Low Threshold (2V Maximum) High Input Impedance and High Gain
- Free from Secondary Breakdown
- Low CISS and Fast Switching Speeds
Applications
- Logic-level Interfaces (Ideal for TTL and CMOS)
- Solid State Relays
- Battery-operated Systems
- Photo-voltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.891 | $ 0.89 |
| 10+ | $ 0.8698 | $ 8.70 |
| 30+ | $ 0.8567 | $ 25.70 |
| 100+ | $ 0.8437 | $ 84.37 |
Boîtier Standard3000/Full Reel | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 150mA | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | SOT-23-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 150mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 360mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF | |
| RDS(on) | 7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 110pF | |
| Type | N-Channel |
Description
The TN5325 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Caractéristiques
- Low Threshold (2V Maximum) High Input Impedance and High Gain
- Free from Secondary Breakdown
- Low CISS and Fast Switching Speeds
Applications
- Logic-level Interfaces (Ideal for TTL and CMOS)
- Solid State Relays
- Battery-operated Systems
- Photo-voltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| TPM2502NS3L | TECH PUBLIC | SOT-23-3L | 2,895 | $0.2642 $0.2781 | ||
| HSS1N25 | HUASHUO | SOT-23L | 535 | $ 0.1835 | ||
| TPM2501NS3 | TECH PUBLIC | SOT-23 | 235 | $0.0991 $0.1043 | ||
| TN2124K1-TP | TECH PUBLIC | SOT-23 | 2,880 | $0.1945 $0.2047 | ||
| BSS131 | TECH PUBLIC | SOT-23 | 6,075 | $ 0.0662 | ||
| DMN24H11DS-TP | TECH PUBLIC | SOT-23-3L | 2,635 | $0.1334 $0.1404 | ||
| TN5335K1-G | MICROCHIP | SOT-23-3 | 0 | $ 2.8773 | ||
| TN2130K1-G | MICROCHIP | SOT-23-3 | 0 | $ 1.3485 | ||
| BSS139H-TP | TECH PUBLIC | SOT-23 | 0 | $ 0.1549 | ||
| SP1N30T1 | Siliup | SOT-23-3L | 0 | $ 0.0476 |