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MICROCHIP 2N6661

Manufacturer
MPN
2N6661
LCSC Part #
C618545
Packaging
TO-5-3
Customer #
Key Attributes
6.25W 90V 1.5A 2V 4Ω@10V 1 N-channel N-Channel TO-5-3 Single FETs, MOSFETs
DatasheetMICROCHIP 2N6661
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QtyUnit Price(Reference Only)Total Amount
1+$ 42.6058$ 42.61
5+$ 41.5092$ 207.55
30+$ 40.2062$ 1206.19
Standard Packaging500/Full Bag
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMICROCHIP
PackagingTO-5-3
Output Capacitance(Coss)40pF
Pd - Power Dissipation6.25W
Operating Temperature-55℃~+150℃
Configuration-
Drain to Source Voltage90V
Current - Continuous Drain(Id)1.5A
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)-
Vgs±20V
TypeN-Channel

Introduction

AI Translation

The 2N6661 is an enhancement-mode (normally-off) transistor fabricated using a vertical double-diffused metal-oxide-semiconductor (VDMOS) structure and a well-established silicon-gate manufacturing process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally induced second breakdown.

VDMOS FETs are well suited for a wide variety of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.

Features

AI Translation
  • No secondary breakdown
  • Low gate drive power requirements
  • Easy parallel operation
  • Low input capacitance (CISS) and fast switching speed
  • Excellent thermal stability
  • Integrated body diode
  • High input impedance and high gain

Applications

AI Translation
  • Motor Control - Converter - Amplifier - Switch - Power Circuit - Driver: Relay, Hammer, Solenoid, Lamp, Memory, Display, Bipolar Transistor, etc.