MICROCHIP 2N6661
| Manufacturer | |
| MPN | 2N6661 |
| LCSC Part # | C618545 |
| Packaging | TO-5-3 |
| Customer # | |
| Key Attributes | 6.25W 90V 1.5A 2V 4Ω@10V 1 N-channel N-Channel TO-5-3 Single FETs, MOSFETs |
| Datasheet | MICROCHIP 2N6661 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-5-3 | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 6.25W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 90V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-5-3 | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 6.25W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 90V | |
| Current - Continuous Drain(Id) | 1.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The 2N6661 is an enhancement-mode (normally-off) transistor fabricated using a vertical double-diffused metal-oxide-semiconductor (VDMOS) structure and a well-established silicon-gate manufacturing process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally induced second breakdown.
VDMOS FETs are well suited for a wide variety of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low gate drive power requirements
- Easy parallel operation
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated body diode
- High input impedance and high gain
Applications
- Motor Control - Converter - Amplifier - Switch - Power Circuit - Driver: Relay, Hammer, Solenoid, Lamp, Memory, Display, Bipolar Transistor, etc.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 42.6058 | $ 42.61 |
| 5+ | $ 41.5092 | $ 207.55 |
| 30+ | $ 40.2062 | $ 1206.19 |
Standard Packaging500/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-5-3 | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 6.25W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 90V | |
| Current - Continuous Drain(Id) | 1.5A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-5-3 | |
| Output Capacitance(Coss) | 40pF | |
| Pd - Power Dissipation | 6.25W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 90V | |
| Current - Continuous Drain(Id) | 1.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The 2N6661 is an enhancement-mode (normally-off) transistor fabricated using a vertical double-diffused metal-oxide-semiconductor (VDMOS) structure and a well-established silicon-gate manufacturing process. This combination gives the device the power-handling capability of a bipolar transistor, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally induced second breakdown.
VDMOS FETs are well suited for a wide variety of switching and amplification applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- No secondary breakdown
- Low gate drive power requirements
- Easy parallel operation
- Low input capacitance (CISS) and fast switching speed
- Excellent thermal stability
- Integrated body diode
- High input impedance and high gain
Applications
- Motor Control - Converter - Amplifier - Switch - Power Circuit - Driver: Relay, Hammer, Solenoid, Lamp, Memory, Display, Bipolar Transistor, etc.
C618545 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



