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Ampleon BLF8G27LS-100J product image
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Ampleon BLF8G27LS-100J

Manufacturer
Ampleon
MPN
BLF8G27LS-100J
LCSC Part #
C6131957
Packaging
SOT-502B
Customer #
Key Attributes
65V 1.9V 100mΩ 1 N-channel N-Channel SOT-502B Single FETs, MOSFETs RoHS
DatasheetAmpleon BLF8G27LS-100J
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QtyUnit Price(Reference Only)Total Amount
1+$ 137.5876$ 137.59
200+$ 54.8993$ 10979.86
500+$ 53.0643$ 26532.15
1,000+$ 52.1581$ 52158.10
Standard Packaging100/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAmpleon
PackagingSOT-502B
Drain to Source Voltage65V
Gate Threshold Voltage (Vgs(th))1.9V
RDS(on)100mΩ
Number1 N-channel
Vgs13V
TypeN-Channel
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Introduction

AI Translation

100 W LDMOS power transistor for base station applications, frequency range 2500 MHz to 2700 MHz, with improved video bandwidth.

Features

AI Translation
  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance for superior thermal stability
  • Designed for wideband operation (2500 MHz to 2700 MHz)
  • Low output capacitance for improved performance in Doherty applications
  • Designed for low memory effects with excellent predistortion capability
  • Internally matched for ease of use
  • Integrated ESD protection
  • RoHS compliant per directive 2002/95/EC

Applications

AI Translation

RF power amplifier for base station and multi-carrier applications in the 2500 MHz to 2700 MHz frequency range