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onsemi NTMFS5C423NLT3G
| Manufacturer | |
| MPN | NTMFS5C423NLT3G |
| LCSC Part # | C604435 |
| Packaging | SO-8-FL-5.8mm |
| Customer # | |
| Key Attributes | 40V 150A 1.3V 83W 2mΩ@10V 1 N-channel SO-8-FL-5.8mm Single FETs, MOSFETs RoHS |
| Datasheet | onsemi NTMFS5C423NLT3G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8-FL-5.8mm | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 50nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8-FL-5.8mm | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 50nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
GT10N10 utilizes advanced trench technology, featuring excellent drain-source on-resistance (RDS(ON)) and low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized gate drive losses
- Lead-free, RoHS compliant
Applications
AI Translation
- Power switching
- DC/DC converters
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.3953 | $ 1.40 |
| 200+ | $ 0.5407 | $ 108.14 |
| 500+ | $ 0.5217 | $ 260.85 |
| 1,000+ | $ 0.5122 | $ 512.20 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8-FL-5.8mm | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 50nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8-FL-5.8mm | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 150A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.1nF | |
| Gate Charge(Qg) | 50nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
GT10N10 utilizes advanced trench technology, featuring excellent drain-source on-resistance (RDS(ON)) and low gate charge, making it suitable for a wide range of applications.
Features
AI Translation
- Compact package (5x6 mm) for space-constrained designs
- Low RDS(on) for minimized conduction losses
- Low QG and capacitance for minimized gate drive losses
- Lead-free, RoHS compliant
Applications
AI Translation
- Power switching
- DC/DC converters
C604435 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NVMFS5C423NLAFT1G | onsemi | SO-8FL | 42 | $ 2.6531 | ||
| MDDG04R1P9G | MDD(Microdiode Semiconductor) | PDFN-8L(5x6) | 2,440 | $0.3329 $0.3432 | ||
| DON160N04T | DOINGTER | DFN5x6-8-Clip | 2,804 | $ 0.4167 | ||
| HYG011N04LS1C2 | HUAYI | DFN5x6-8 | 2,691 | $ 0.7017 | ||
| CMSA024N06L | Cmos | DFN-8(5x6) | 396 | $0.4689 $0.4935 | ||
| LWT4T02HD5 | Lewa Micro | PDFN-8L(5x6) | 4,746 | $ 0.4993 | ||
| KCY2704B | KIA Semicon Tech | DFN-8(5x6) | 0 | $ 0.3166 | ||
| X2P2N040GLV8 | XYD | PDFN-8L(5x6) | 0 | $ 0.6229 | ||
| JMSL0402AGQ-13 | Jiangsu JieJie Microelectronics | PDFN5x6-8L | 0 | $ 1.1535 | ||
| NTMFSC1D6N06CL | onsemi | DFN-8(5x6.2) | 0 | $ 2.2875 |