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onsemi NTHL040N65S3HF
| Manufacturer | |
| MPN | NTHL040N65S3HF |
| LCSC Part # | C604405 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 65A TO-247 |
| Datasheet | onsemi NTHL040N65S3HF |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 5.945nF | |
| Pd - Power Dissipation | 446W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 65A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5.945nF | |
| Pd - Power Dissipation | 446W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 32 mΩ
- Ultra Low Gate Charge (Typ. Qg = 159 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 1367 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 20.7992 | $ 20.80 |
| 10+ | $ 20.1813 | $ 201.81 |
Standard Packaging450/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 5.945nF | |
| Pd - Power Dissipation | 446W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-247 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 65A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 5.945nF | |
| Pd - Power Dissipation | 446W | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 159nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 32 mΩ
- Ultra Low Gate Charge (Typ. Qg = 159 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 1367 pF)
- 100% Avalanche Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar
C604405 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| NTHL040N65S3F | onsemi | Similar | TO-247-3 | 10 | $ 16.1191 | ||
| FCH040N65S3-F155 | onsemi | Similar | TO-247-3 | 33 | $ 11.8658 | ||
| ASW65R038EFD | ANHI | Similar | TO-247 | 46 | $ 5.4809 | ||
| MJQ80N65F | MIRACLE POWER | Similar | TO-247 | 28 | $4.7386 $4.9879 | ||
| OSH65R038 | OSEN | Similar | TO-247H | 26 | $ 4.0963 |