ROHM RF4E070GNTR
| Manufacturer | |
| MPN | RF4E070GNTR |
| LCSC Part # | C5868637 |
| Packaging | - |
| Customer # | |
| Key Attributes | 30V 7A 2.5V 2W 21.4mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS |
| Datasheet | ROHM RF4E070GNTR |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 21.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4.8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 21.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4.8nC@10V |
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Introduction
AI Translation
NextPower 100 V standard-level gate drive MOSFET. Qualified to 175 °C, recommended for industrial and consumer applications.
Features
AI Translation
- Low on-resistance
- High power, small footprint package (HUML2020L8)
- Lead-free lead finish; RoHS compliant
- Halogen-free
- 100% Rg and UIS tested
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1692 | $ 0.17 |
| 200+ | $ 0.0675 | $ 13.50 |
| 500+ | $ 0.0653 | $ 32.65 |
| 1,000+ | $ 0.0642 | $ 64.20 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 2W | |
| RDS(on) | 21.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4.8nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ROHM | |
| Packaging | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2W | |
| RDS(on) | 21.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 220pF | |
| Gate Charge(Qg) | 4.8nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NextPower 100 V standard-level gate drive MOSFET. Qualified to 175 °C, recommended for industrial and consumer applications.
Features
AI Translation
- Low on-resistance
- High power, small footprint package (HUML2020L8)
- Lead-free lead finish; RoHS compliant
- Halogen-free
- 100% Rg and UIS tested
Applications
AI Translation
- Switching applications
C5868637 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

