Central MJ2955 PBFREE
| Fabricante | |
| N.º de pieza fab. | MJ2955 PBFREE |
| Nº LCSC | C5798613 |
| Emb. | TO-3 |
| Número de Cliente | |
| Atrib. clave | 70V PNP TO-3 Single Bipolar Transistors RoHS |
| Hoja de Datos | Central MJ2955 PBFREE |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | Central | |
| Emb. | TO-3 | |
| Current - Collector Cutoff | 700uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 2.5MHz | |
| Collector - Emitter Voltage VCEO | 70V | |
| DC Current Gain | - | |
| Current - Collector(Ic) | - | |
| Pd - Power Dissipation | - | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | - |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | Central | |
| Emb. | TO-3 | |
| Current - Collector Cutoff | 700uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 2.5MHz |
| Tipo | Descripción | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 70V | |
| DC Current Gain | - | |
| Current - Collector(Ic) | - | |
| Pd - Power Dissipation | - | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | - |
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Descripción
Traducción por IA
The 2N3055 and MJ2955 from CENTRAL SEMICONDUCTOR are complementary silicon power transistors fabricated using an epitaxial base process, housed in hermetically sealed metal packages, and designed for general-purpose switching and amplifier applications.
Aplicaciones
Traducción por IA
General-purpose switch, amplifier
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 4.6899 | $ 4.69 |
| 200+ | $ 1.8714 | $ 374.28 |
| 500+ | $ 1.8093 | $ 904.65 |
| 1,000+ | $ 1.7775 | $ 1777.50 |
Encapsulado Estándar20/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | Central | |
| Emb. | TO-3 | |
| Current - Collector Cutoff | 700uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 2.5MHz | |
| Collector - Emitter Voltage VCEO | 70V | |
| DC Current Gain | - | |
| Current - Collector(Ic) | - | |
| Pd - Power Dissipation | - | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | - |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | Central | |
| Emb. | TO-3 | |
| Current - Collector Cutoff | 700uA | |
| Operating Temperature | - | |
| Transition frequency(fT) | 2.5MHz |
| Tipo | Descripción | |
|---|---|---|
| Collector - Emitter Voltage VCEO | 70V | |
| DC Current Gain | - | |
| Current - Collector(Ic) | - | |
| Pd - Power Dissipation | - | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | - |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The 2N3055 and MJ2955 from CENTRAL SEMICONDUCTOR are complementary silicon power transistors fabricated using an epitaxial base process, housed in hermetically sealed metal packages, and designed for general-purpose switching and amplifier applications.
Aplicaciones
Traducción por IA
General-purpose switch, amplifier
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |

