Imágenes ilustrativas
Modelos EDAEasyEDA
GeneSiC Semiconductor MBR2X160A150
| Fabricante | |
| N.º de pieza fab. | MBR2X160A150 |
| Nº LCSC | C5795413 |
| Emb. | SOT-227 |
| Número de Cliente | |
| Atrib. clave | 2 Independent 320A 150V 880mV@160A SOT-227 Diode Arrays RoHS |
| Hoja de Datos | GeneSiC Semiconductor MBR2X160A150 |
| Piezas alternativas | 3 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 2 Independent | |
| Current - Rectified | 320A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 3mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@160A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 2 Independent |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 320A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 3mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@160A |
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Características
Traducción por IA
- High surge capability
- 150V V<sub>RRM</sub> type
- Isolated package
- Electrically isolated baseplate
- Insensitive to ESD
- SOT-227 package
Agotado
Avisarme
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 131.687 | $ 131.69 |
| 208+ | $ 52.5445 | $ 10929.26 |
| 520+ | $ 50.7883 | $ 26409.92 |
| 988+ | $ 49.9215 | $ 49322.44 |
Encapsulado Estándar52/Full Bag | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 2 Independent | |
| Current - Rectified | 320A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 3mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@160A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Fabricante | GeneSiC Semiconductor | |
| Emb. | SOT-227 | |
| Non-Repetitive Peak Forward Surge Current | 2kA | |
| Diode Configuration | 2 Independent |
| Tipo | Descripción | |
|---|---|---|
| Current - Rectified | 320A | |
| Operating Junction Temperature Range | -40℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 150V | |
| Reverse Leakage Current (Ir) | 3mA@150V | |
| Voltage - Forward(Vf@If) | 880mV@160A |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- High surge capability
- 150V V<sub>RRM</sub> type
- Isolated package
- Electrically isolated baseplate
- Insensitive to ESD
- SOT-227 package
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| VS-QA300FA17 | VISHAY | SOT-227 | 29 | $ 35.1848 | ||
| MBR2X160A180 | GeneSiC Semiconductor | SOT-227 | 0 | $ 131.6961 | ||
| MBR2X160A200 | GeneSiC Semiconductor | SOT-227 | 0 | $ 137.9977 |