DIODES DMTH15H017SPS-13
| Manufacturer | |
| MPN | DMTH15H017SPS-13 |
| LCSC Part # | C5673659 |
| Packaging | PowerDI5060-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 61A PowerDI5060-8 |
| Datasheet | DIODES DMTH15H017SPS-13 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 213pF | |
| Current - Continuous Drain(Id) | 61A | |
| Ciss-Input Capacitance | 2.344nF | |
| Pd - Power Dissipation | 1.5W;107W | |
| Reverse Transfer Capacitance (Crss) | 6.9pF | |
| RDS(on) | 19mΩ@10V;22mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 213pF | |
| Current - Continuous Drain(Id) | 61A | |
| Ciss-Input Capacitance | 2.344nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W;107W | |
| Reverse Transfer Capacitance (Crss) | 6.9pF | |
| RDS(on) | 19mΩ@10V;22mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize RDS(ON) while maintaining superior switching performance. The device is ideal for notebook battery power management and load switching applications.
Features
AI Translation
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% Unclamped Inductive Switching (UIS) tested during production — ensuring greater reliability and durability in end applications
- High thermal efficiency package — lower operating temperatures in applications
- High conversion efficiency
- Low RDS(ON) — minimizes conduction loss
- Low input capacitance
- Fast switching speed
- Package height less than 1.1mm — suitable for slim and lightweight applications (PowerDI)
- Lead-free surface finish; RoHS compliant
- Halogen and antimony free. "Green" device
Applications
AI Translation
- Motor control
- DC-DC converter
- Power management
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 213pF | |
| Current - Continuous Drain(Id) | 61A | |
| Ciss-Input Capacitance | 2.344nF | |
| Pd - Power Dissipation | 1.5W;107W | |
| Reverse Transfer Capacitance (Crss) | 6.9pF | |
| RDS(on) | 19mΩ@10V;22mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 213pF | |
| Current - Continuous Drain(Id) | 61A | |
| Ciss-Input Capacitance | 2.344nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W;107W | |
| Reverse Transfer Capacitance (Crss) | 6.9pF | |
| RDS(on) | 19mΩ@10V;22mΩ@8V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 34nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize RDS(ON) while maintaining superior switching performance. The device is ideal for notebook battery power management and load switching applications.
Features
AI Translation
- Rated temperature up to +175℃ — suitable for high ambient temperature environments
- 100% Unclamped Inductive Switching (UIS) tested during production — ensuring greater reliability and durability in end applications
- High thermal efficiency package — lower operating temperatures in applications
- High conversion efficiency
- Low RDS(ON) — minimizes conduction loss
- Low input capacitance
- Fast switching speed
- Package height less than 1.1mm — suitable for slim and lightweight applications (PowerDI)
- Lead-free surface finish; RoHS compliant
- Halogen and antimony free. "Green" device
Applications
AI Translation
- Motor control
- DC-DC converter
- Power management
C5673659 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

