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Nexperia PEMB10,115
| Manufacturer | |
| MPN | PEMB10,115 |
| LCSC Part # | C552384 |
| Packaging | SOT-666 |
| Customer # | |
| Key Attributes | TRANS PREBIAS PNP 50V SOT-666 |
| Datasheet | Nexperia PEMB10,115 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
Features
AI Translation
- Output current capability up to 100 mA
- Built-in bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applications
AI Translation
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 30
30 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6027 | $ 0.60 |
| 10+ | $ 0.4919 | $ 4.92 |
| 30+ | $ 0.4366 | $ 13.10 |
| 100+ | $ 0.3812 | $ 38.12 |
| 500+ | $ 0.347 | $ 173.50 |
| 1,000+ | $ 0.3307 | $ 330.70 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Nexperia | |
| Packaging | SOT-666 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 180MHz | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Vce Saturation(VCE(sat)) | 100mV | |
| Operating Temperature | -65℃~+150℃ | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 21 | |
| Pd - Power Dissipation | 300mW | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV | |
| Current - Collector(Ic) | 100mA | |
| Voltage - Input(Max)(VI(off)) | 500mV | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | PNP | |
| Number | 2 PNP Pre-Biased Transistors |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
Features
AI Translation
- Output current capability up to 100 mA
- Built-in bias resistors
- Simplified circuit design
- Reduced component count
- Lower assembly cost
- AEC-Q101 qualified
Applications
AI Translation
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
C552384 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| DDA123JH-7 | DIODES | Similar | SOT-563 | 80 | $0.0503 $0.1523 | ||
| PEMB13,115 | Nexperia | Similar | SOT-666 | 0 | $ 0.4031 | ||
| EMB75T2R | ROHM | Similar | SOT-563(SOT-666) | 0 | $ 0.0964 | ||
| EMB60T2R | ROHM | Similar | SOT-563(SOT-666) | 0 | $ 0.0497 | ||
| RN2906FE,LXHF(CT | TOSHIBA | Similar | SOT-563(SOT-666) | 0 | $ 0.176 |
5 more alternative parts.View all substitutes