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EDA ModelsEasyEDA
Nexperia PDTC124EMB,315
| Manufacturer | |
| MPN | PDTC124EMB,315 |
| LCSC Part # | C552190 |
| Packaging | SOT-883-3 |
| Customer # | |
| Key Attributes | 50V 60 100mA 250mW 1 NPN (Pre-Biased) NPN SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | Nexperia PDTC124EMB,315 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 9 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NPN resistor-equipped transistor (RET) in a leadless ultra-compact DFN1006B-3 (SOT883B) SMD plastic package. PNP complementary type: PDTA124EMB.
Features
AI Translation
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower assembly cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Applications
AI Translation
- Low-current peripheral driver
- Control IC input
- General-purpose transistor replacement in digital applications
- Mobile applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0175 | $ 0.02 |
| 10+ | $ 0.0137 | $ 0.14 |
| 30+ | $ 0.0116 | $ 0.35 |
| 100+ | $ 0.0103 | $ 1.03 |
| 500+ | $ 0.0092 | $ 4.60 |
| 1,000+ | $ 0.0086 | $ 8.60 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 230MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| DC Current Gain | 60 | |
| Emitter-Base Voltage VEBO | 10V | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.7V@5mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| Number | 1 NPN (Pre-Biased) | |
| type | NPN |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
NPN resistor-equipped transistor (RET) in a leadless ultra-compact DFN1006B-3 (SOT883B) SMD plastic package. PNP complementary type: PDTA124EMB.
Features
AI Translation
- Output current capability up to 100 mA
- Reduced component count
- Built-in bias resistors
- Lower assembly cost
- Simplified circuit design
- AEC-Q101 qualified
- Leadless ultra-compact SMD plastic package
- Package height as low as 0.37 mm
Applications
AI Translation
- Low-current peripheral driver
- Control IC input
- General-purpose transistor replacement in digital applications
- Mobile applications
C552190 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PDTC143EM,315 | Nexperia | SOT-883-3 | 9,980 | $ 0.0601 | ||
| PDTC124XMB,315 | Nexperia | SOT-883-3 | 10,000 | $ 0.7247 | ||
| PDTC114YM,315 | Nexperia | SOT-883-3 | 9,560 | $ 0.056 | ||
| DTC143EDC | PJSEMI | DFN-3L(1x0.6) | 6,340 | $0.0190 $0.0316 | ||
| PDTC114EMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0097 | ||
| NSBC124EF3T5G | onsemi | SOT-1123 | 0 | $ 0.2028 | ||
| PDTC123EMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.016 | ||
| PDTC123EM,315 | Nexperia | SOT-883-3 | 0 | $ 0.0175 | ||
| PDTC114YMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0308 |