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Nexperia BUK9Y27-40B,115
| Fabricant | |
| Réf. Fab. | BUK9Y27-40B,115 |
| Réf. LCSC | C550044 |
| Condit. | SOT-669 |
| Numéro Client | |
| Caract. clés | 59.4W 40V 34A 2.3V 24mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Fiche Technique | Nexperia BUK9Y27-40B,115 |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Nexperia | |
| Condit. | SOT-669 | |
| Output Capacitance(Coss) | 146pF | |
| Pd - Power Dissipation | 59.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 34A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 959pF | |
| Gate Charge(Qg) | 11nC@5V | |
| Vgs | ±15V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Nexperia | |
| Condit. | SOT-669 | |
| Output Capacitance(Coss) | 146pF | |
| Pd - Power Dissipation | 59.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 34A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 959pF | |
| Gate Charge(Qg) | 11nC@5V | |
| Vgs | ±15V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
Plastic-encapsulated logic-level N-channel enhancement-mode FET using TrenchMOS technology. This product has been designed and qualified in accordance with the applicable AEC standards, suitable for automotive critical applications.
Caractéristiques
Traduction par IA
- Low on-resistance, reduced conduction losses
- Compatible with logic-level gate drive sources
- Q101 compliant
- Rated up to 175°C for high thermal demand environments
Applications
Traduction par IA
- 12 V load
- General-purpose power switch
- Automotive systems
- Motors, lamps, and solenoids
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Minimum: 1Multiple: 1Unité de vente: Piece
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| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 0.9149 | $ 0.91 |
| 200+ | $ 0.3552 | $ 71.04 |
| 500+ | $ 0.3425 | $ 171.25 |
| 1,500+ | $ 0.3362 | $ 504.30 |
Boîtier Standard1500/Full Reel | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Nexperia | |
| Condit. | SOT-669 | |
| Output Capacitance(Coss) | 146pF | |
| Pd - Power Dissipation | 59.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 34A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 959pF | |
| Gate Charge(Qg) | 11nC@5V | |
| Vgs | ±15V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Nexperia | |
| Condit. | SOT-669 | |
| Output Capacitance(Coss) | 146pF | |
| Pd - Power Dissipation | 59.4W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 34A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 959pF | |
| Gate Charge(Qg) | 11nC@5V | |
| Vgs | ±15V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
Plastic-encapsulated logic-level N-channel enhancement-mode FET using TrenchMOS technology. This product has been designed and qualified in accordance with the applicable AEC standards, suitable for automotive critical applications.
Caractéristiques
Traduction par IA
- Low on-resistance, reduced conduction losses
- Compatible with logic-level gate drive sources
- Q101 compliant
- Rated up to 175°C for high thermal demand environments
Applications
Traduction par IA
- 12 V load
- General-purpose power switch
- Automotive systems
- Motors, lamps, and solenoids
C550044 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| BUK9Y25-60E,115 | Nexperia | SOT-669 | 8,715 | $ 0.3917 | ||
| PSMN025-80YLX | Nexperia | SOT-669 | 95 | $ 1.2608 | ||
| PSMN028-100YS,115 | Nexperia | SOT-669 | 27 | $ 1.3712 | ||
| BUK9Y09-40B,115 | Nexperia | SOT-669 | 100 | $ 1.7262 | ||
| BUK7Y7R8-80E | Nexperia | SOT-669 | 28 | $ 2.5995 | ||
| BUK9Y19-100E,115 | Nexperia | SOT-669 | 1,257 | $ 1.1423 | ||
| PSMN019-100YLX | Nexperia | SOT-669 | 75 | $ 2.5263 | ||
| BUK7Y25-40B,115 | Nexperia | SOT-669 | 0 | $ 0.4453 | ||
| BUK9Y30-75B,115 | Nexperia | SOT-669 | 0 | $ 0.7775 | ||
| BUK9Y15-60E,115 | Nexperia | SOT-669 | 0 | $ 0.5464 |