DOINGTER ZI070TFG
| Manufacturer | DOINGTERAsian Brands |
| MPN | ZI070TFG |
| LCSC Part # | C54110312 |
| Packaging | DFN-8(3x3) |
| Customer # | |
| Key Attributes | 150V 18A 3V 10W 60mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs |
| Datasheet | DOINGTER ZI070TFG |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN-8(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 52pF | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 10W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 368pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN-8(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 52pF | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 10W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 368pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 150V, ID = 18A, RDS(ON) < 70mΩ @ VGS = 10V (typical: 55mΩ)
- Low gate charge
- Green device options available
- Advanced high cell density SGT technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
- MSL3
In-Stock: 2,490
2,490 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1781 | $ 0.89 |
| 50+ | $ 0.1411 | $ 7.06 |
| 150+ | $ 0.1252 | $ 18.78 |
| 500+ | $ 0.1054 | $ 52.70 |
| 2,500+ | $ 0.0966 | $ 241.50 |
| 5,000+ | $ 0.0913 | $ 456.50 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN-8(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 52pF | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 10W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 368pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | DFN-8(3x3) | |
| Operating Temperature | -50℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 18A | |
| Output Capacitance(Coss) | 52pF | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 10W | |
| RDS(on) | 60mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 368pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 150V, ID = 18A, RDS(ON) < 70mΩ @ VGS = 10V (typical: 55mΩ)
- Low gate charge
- Green device options available
- Advanced high cell density SGT technology for ultra-low RDS(ON)
- Excellent package with good thermal dissipation
- MSL3
C54110312 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



