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Modelos EDAEasyEDA
Infineon IPP60R125CP
| Fabricante | |
| N.º de pieza fab. | IPP60R125CP |
| Nº LCSC | C537202 |
| Emb. | TO-220 |
| Número de Cliente | |
| Atrib. clave | MOSFET 650V 25A TO-220 |
| Hoja de Datos | Infineon IPP60R125CP |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 53nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 53nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Minimum figure of merit Ron x Qg
- Ultra-low gate charge
- Very high dv/dt rating
- High peak current capability
- Compliant with JEDEC standard for industrial applications
- Lead-free lead plating; RoHS compliant; halogen-free molding compound
Aplicaciones
Traducción por IA
- Hard-switching topologies for server and telecom applications
En stock: 4
4 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 17.2129 | $ 17.21 |
| 10+ | $ 16.6606 | $ 166.61 |
| 30+ | $ 15.7037 | $ 471.11 |
| 100+ | $ 14.8686 | $ 1486.86 |
Encapsulado Estándar500/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 53nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 120pF | |
| Pd - Power Dissipation | 208W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 25A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.5nF | |
| Gate Charge(Qg) | 53nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Minimum figure of merit Ron x Qg
- Ultra-low gate charge
- Very high dv/dt rating
- High peak current capability
- Compliant with JEDEC standard for industrial applications
- Lead-free lead plating; RoHS compliant; halogen-free molding compound
Aplicaciones
Traducción por IA
- Hard-switching topologies for server and telecom applications
C537202 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| NTP110N65S3HF | onsemi | TO-220 | 38 | $5.4791 $7.6098 | ||
| SP25HF65TQ | Siliup | TO-220-3L | 186 | $1.1835 $1.3149 | ||
| STP43N60DM2 | ST | TO-220 | 6 | $ 2.877 | ||
| IPP60R099CP | Infineon | TO-220 | 36 | $ 3.3322 | ||
| NTP095N65S3H | onsemi | TO-220 | 10 | $ 9.0443 | ||
| NTP150N65S3HF | onsemi | TO-220 | 10 | $ 6.133 | ||
| LJ65R130F | luJing | TO-220 | 49 | $1.7291 $1.8201 | ||
| IPP60R125C6 | Infineon | TO-220 | 0 | $ 8.9663 | ||
| IXTP32N65XM | Littelfuse | TO-220-3 | 0 | $ 14.7346 | ||
| TK28E65W,S1X | TOSHIBA | TO-220 | 0 | $ 5.6415 |