Infineon IPN50R1K4CE
| Manufacturer | |
| MPN | IPN50R1K4CE |
| LCSC Part # | C537071 |
| Packaging | SOT-223-3 |
| Customer # | |
| Key Attributes | 5W 550V 4.8A 3.5V 1.4Ω@13V 1 N-channel N-Channel SOT-223-3 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPN50R1K4CE |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-3 | |
| Output Capacitance(Coss) | 11pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@13V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-3 | |
| Output Capacitance(Coss) | 11pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@13V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-performance-optimized platform that meets the highest efficiency standards while serving cost-sensitive applications in the consumer and lighting markets. The new series delivers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, offering the best cost-reduction performance ratio on the market.
Features
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Excellent commutation ruggedness
- Easy to use/drive
- Lead-free plating, halogen-free mold compound
- Suitable for standard grade applications
Applications
- Adapter
- Charger
- Lighting
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4338 | $ 0.43 |
| 10+ | $ 0.4273 | $ 4.27 |
| 30+ | $ 0.4225 | $ 12.68 |
| 100+ | $ 0.4176 | $ 41.76 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-3 | |
| Output Capacitance(Coss) | 11pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@13V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-223-3 | |
| Output Capacitance(Coss) | 11pF | |
| Pd - Power Dissipation | 5W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 550V | |
| Current - Continuous Drain(Id) | 4.8A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 1.4Ω@13V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 178pF | |
| Gate Charge(Qg) | 8.2nC@13V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. CoolMOS CE is a cost-performance-optimized platform that meets the highest efficiency standards while serving cost-sensitive applications in the consumer and lighting markets. The new series delivers all the advantages of fast-switching SJ MOSFETs without compromising ease of use, offering the best cost-reduction performance ratio on the market.
Features
- Extremely low losses due to ultra-low figure of merit Rdson*Qg and Eoss
- Excellent commutation ruggedness
- Easy to use/drive
- Lead-free plating, halogen-free mold compound
- Suitable for standard grade applications
Applications
- Adapter
- Charger
- Lighting
C537071 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IPN60R1K5CEATMA1 | Infineon | Similar | SOT-223 | 3,125 | $ 0.5763 | ||
| IPN60R1K0CE | Infineon | Similar | SOT-223 | 100 | $ 0.5524 | ||
| IPN60R600P7S | Infineon | Similar | SOT-223 | 861 | $ 0.5584 | ||
| IPN70R600P7SATMA1 | Infineon | Similar | SOT-223 | 140 | $ 0.5891 | ||
| IPN70R750P7SATMA1 | Infineon | Similar | SOT-223 | 228 | $ 1.2201 |



