Infineon IPL60R210P6
| Fabricante | |
| Cód. da peça | IPL60R210P6 |
| Nº LCSC | C537033 |
| Emb. | VSON-4-EP(8.1x8.1) |
| Número do Cliente | |
| Atrib. princ. | 151W 600V 12.1A 4.5V 210mΩ@10V 1 N-channel N-Channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS |
| Folha de Dados | Infineon IPL60R210P6 |
| Conformidade RoHS | 1 documentos disponíveis |
| Peças alternativas | 10 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 76pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 76pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12.1A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrição
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ P6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovative technology. The offered devices feature all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally superior.
Recursos
- Enhanced MOSFET dv/dt robustness
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22) standards
Aplicações
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant switching stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecommunications, and UPS
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 1+ | $ 2.3858 | $ 2.39 |
| 10+ | $ 2.0104 | $ 20.10 |
| 30+ | $ 1.7747 | $ 53.24 |
| 100+ | $ 1.5326 | $ 153.26 |
| 500+ | $ 1.4237 | $ 711.85 |
| 1,000+ | $ 1.3766 | $ 1376.60 |
Encapsulamento Padrão3000/Full Reel | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 76pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12.1A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | VSON-4-EP(8.1x8.1) | |
| Output Capacitance(Coss) | 76pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -40℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 12.1A |
| Tipo | Descrição | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.75nF | |
| Gate Charge(Qg) | 37nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Descrição
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The CoolMOS™ P6 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovative technology. The offered devices feature all the advantages of fast-switching SJ MOSFETs without sacrificing ease of use. Extremely low switching and conduction losses make switching applications more efficient, compact, lightweight, and thermally superior.
Recursos
- Enhanced MOSFET dv/dt robustness
- Ultra-low losses due to extremely low figure of merit Rdson*Qg and Eoss
- Extremely high commutation robustness
- Easy to use/drive
- Lead-free plating, halogen-free molding compound
- Qualified for industrial applications per JEDEC (J-STD20 and JESD22) standards
Aplicações
- Power Factor Correction (PFC) stage
- Hard-switching PWM stage
- Resonant switching stage, e.g. for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecommunications, and UPS
C537033 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|
| IPL60R199CP | Infineon | VSON-4-EP(8.1x8.1) | 182 | $ 4.3308 | ||
| IPL60R115CFD7 | Infineon | VSON-4-EP(8.1x8.1) | 184 | $ 3.4069 | ||
| IPL60R125C7 | Infineon | VSON-4-EP(8.1x8.1) | 4 | $ 4.1266 | ||
| IPL65R099C7 | Infineon | VSON-4-EP(8.1x8.1) | 16 | $ 10.182 | ||
| IPL60R285P7 | Infineon | VSON-4-EP(8.1x8.1) | 3 | $ 4.2561 | ||
| IPL60R185P7 | Infineon | VSON-4-EP(8.1x8.1) | 17 | $ 1.8879 | ||
| IPL60R185C7 | Infineon | VSON-4-EP(8.1x8.1) | 553 | $ 1.7027 | ||
| IPL60R065C7 | Infineon | VSON-4-EP(8.1x8.1) | 20 | $ 8.6528 | ||
| IPL65R210CFD | Infineon | VSON-4-EP(8.1x8.1) | 0 | $ 4.2776 | ||
| IPL60R160CFD7 | Infineon | VSON-4-EP(8.1x8.1) | 0 | $ 6.0587 |



