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Infineon IPD60R170CFD7
| Manufacturer | |
| MPN | IPD60R170CFD7 |
| LCSC Part # | C536800 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | 76W 650V 9A 4V 170mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPD60R170CFD7 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 9 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 76W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 76W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed on the super junction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is a platform specifically optimized for soft-switching applications such as phase-shifted full bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves maximum efficiency in resonant topologies. As part of the fast body diode portfolio, this new product series combines all the advantages of fast switching technology with outstanding hard-commutation robustness, and is easy to implement during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and cooler.
Features
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applications
- Soft-switching topology
- Phase-shifted full-bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.4776 | $ 2.48 |
| 10+ | $ 2.4337 | $ 24.34 |
| 30+ | $ 2.4061 | $ 72.18 |
| 100+ | $ 2.3769 | $ 237.69 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 76W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252-3 | |
| Output Capacitance(Coss) | 22pF | |
| Pd - Power Dissipation | 76W | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 9A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 402pF | |
| RDS(on) | 170mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.199nF | |
| Gate Charge(Qg) | 28nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed on the super junction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is a platform specifically optimized for soft-switching applications such as phase-shifted full bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 achieves maximum efficiency in resonant topologies. As part of the fast body diode portfolio, this new product series combines all the advantages of fast switching technology with outstanding hard-commutation robustness, and is easy to implement during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and cooler.
Features
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved dv/dt and diF/dt robustness of MOSFET body diode
- Lowest figure-of-merit RDS(on)*Qg and RDS(on)*Eoss
- Best-in-class RDS(on) in SMD and THD packages
Applications
- Soft-switching topology
- Phase-shifted full-bridge (ZVS), LLC applications — servers, telecom, EV charging
- Industrial applications
C536800 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IPD60R180P7 | Infineon | TO-252 | 408 | $ 1.58 | ||
| IPD60R180P7S | Infineon | TO-252-3 | 6,095 | $ 0.849 | ||
| RS65R280BD | REASUNOS | TO-252 | 2,429 | $0.6197 $0.6523 | ||
| MOT70R380D | MOT | TO-252 | 471 | $0.5554 $0.6171 | ||
| STD65N160M9 | ST | DPAK | 1 | $ 5.5189 | ||
| NCH75R190S | NH | TO-252 | 647 | $ 0.513 | ||
| TK7P60W-VB | VBsemi Elec | TO-252 | 12 | $0.8476 $0.9971 | ||
| IPD65R190C7ATMA1 | Infineon | TO-252-3 | 0 | $ 2.965 | ||
| WTM11N65AD | WPMtek | TO-252 | 0 | $ 0.8149 |