Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon IPB80N06S2L-09
| Producent | |
| Nr części prod. | IPB80N06S2L-09 |
| Nr LCSC | C536669 |
| Opak. | TO-263-3 |
| Numer Klienta | |
| Klucz. cechy | 55V 80A 1.2V 190W 1 N-channel TO-263-3 Single FETs, MOSFETs RoHS |
| Karta Katalogowa |  Infineon IPB80N06S2L-09 |
| Zgodność z dyrektywą RoHS | Dostępnych dokumentów: 1 |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 105nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 105nC@10V |
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Funkcje
Tłumaczenie AI
- N-Channel Logic Level - Enhancement Mode
- Automotive AEC Q101 Qualified
- MSL 1, 260°C Peak Reflow Temperature
- Operating Temperature up to 175°C
- Green Package (Lead-Free)
- Ultra-Low On-State Resistance Rds(on)
- 100% Avalanche Tested
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Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 2.8616 | $ 2.86 |
| 200+ | $ 1.1083 | $ 221.66 |
| 500+ | $ 1.0697 | $ 534.85 |
| 1,000+ | $ 1.0496 | $ 1049.60 |
Standardowa Obudowa1000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 105nC@10V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | TO-263-3 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 190W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.62nF | |
| Gate Charge(Qg) | 105nC@10V |
Zgłoś błądPokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- N-Channel Logic Level - Enhancement Mode
- Automotive AEC Q101 Qualified
- MSL 1, 260°C Peak Reflow Temperature
- Operating Temperature up to 175°C
- Green Package (Lead-Free)
- Ultra-Low On-State Resistance Rds(on)
- 100% Avalanche Tested
C536669 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| PTY12HN06 | PUOLOP | TO-263-3 | 800 | $ 0.8221 | ||
| IPB033N10N5LF | Infineon | TO-263-3 | 664 | $ 2.8922 | ||
| STH145N8F7-2AG | ST | TO-263-3 | 40 | $ 6.1363 | ||
| JMSH1008AE-13 | Jiangsu JieJie Microelectronics | TO-263-3L | 47 | $ 0.8205 | ||
| IPB037N06N3 G | Infineon | TO-263-3 | 796 | $ 1.07 | ||
| PTY10HN08 | PUOLOP | TO-263-3 | 795 | $ 0.6598 | ||
| SP015N09GHTD | Siliup | TO-263-3L | 111 | $ 0.952 | ||
| IPB120N10S4-03 | Infineon | TO-263-3 | 10 | $ 4.4125 | ||
| IPB120N10S4-05 | Infineon | TO-263-3 | 0 | $ 4.7813 | ||
| IPB029N06N3GATMA1 | Infineon | TO-263-3 | 0 | $ 7.0672 |