Infineon IPB020N04N G
| Manufacturer | |
| MPN | IPB020N04N G |
| LCSC Part # | C536483 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | 40V 140A 4V 167W 2mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IPB020N04N G |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 140A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 167W | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.7nF | |
| Gate Charge(Qg) | 120nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 140A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 167W | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.7nF | |
| Gate Charge(Qg) | 120nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- MOSFET for ORing and uninterruptible power supplies
- JEDEC-compliant for target applications
- N-channel normal level
- Ultra-low on-resistance RDS(on)
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.4348 | $ 2.43 |
| 200+ | $ 0.9426 | $ 188.52 |
| 500+ | $ 0.9104 | $ 455.20 |
| 1,000+ | $ 0.8935 | $ 893.50 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 140A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 167W | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.7nF | |
| Gate Charge(Qg) | 120nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 140A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 167W | |
| RDS(on) | 2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 9.7nF | |
| Gate Charge(Qg) | 120nC@10V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- MOSFET for ORing and uninterruptible power supplies
- JEDEC-compliant for target applications
- N-channel normal level
- Ultra-low on-resistance RDS(on)
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
C536483 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| FDB0260N1007L | onsemi | TO-263-7 | 3 | $ 14.6915 | ||
| IPB025N10N3G(TOKMAS) | Tokmas | TO-263-7L | 290 | $ 1.723 | ||
| IRFS7730TRL7PP(TOKMAS) | Tokmas | TO-263-7 | 297 | $ 1.0061 | ||
| IPF017N08NF2SATMA1 | Infineon | TO-263-7 | 4 | $ 4.3459 | ||
| IPF019N12NM6ATMA1 | Infineon | PG-TO263-7 | 38 | $ 7.9591 | ||
| MDES14N045RH | MagnaChip Semicon | D2PAK-7L | 639 | $ 1.505 | ||
| CI7530 | Tokmas | TO-263-7 | 61 | $ 1.1718 | ||
| NTBGS002N06C | onsemi | TO-263-7 | 0 | $ 7.0855 | ||
| IRFS3006TRL7PP | Infineon | D2PAK-7 | 0 | $ 2.9755 | ||
| IPB140N08S4-04 | Infineon | TO-263-7 | 0 | $ 3.2768 |

