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EDA ModelsEasyEDA
Infineon BCR 08PN H6727
| Manufacturer | |
| MPN | BCR 08PN H6727 |
| LCSC Part # | C533805 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | 70 250mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet | Infineon BCR 08PN H6727 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 70 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 300mV@10mA,0.5mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.052 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@2mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 70 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 300mV@10mA,0.5mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.052 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@2mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Features
AI Translation
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated NPN/PNP Transistors in one package
- Built in bias resistor NPN and PNP (R₁ = 2.2 kΩ, R₂ = 47 kΩ)
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1028 | $ 0.10 |
| 200+ | $ 0.0398 | $ 7.96 |
| 500+ | $ 0.0384 | $ 19.20 |
| 1,000+ | $ 0.0378 | $ 37.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 70 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 300mV@10mA,0.5mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.052 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@2mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | Infineon | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 170MHz | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 70 | |
| Operating Temperature | - | |
| Vce Saturation(VCE(sat)) | 300mV@10mA,0.5mA | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 2.9kΩ | |
| Resistor Ratio | 0.052 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@2mA,0.3V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated NPN/PNP Transistors in one package
- Built in bias resistor NPN and PNP (R₁ = 2.2 kΩ, R₂ = 47 kΩ)
- Pb-free (RoHS compliant) package
- Qualified according AEC Q101
C533805 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SMUN5335DW1T1G | onsemi | SC-88 | 45 | $ 0.1883 | ||
| PUMD16,115 | Nexperia | SOT-363 | 1,235 | $ 0.1061 | ||
| MUN5335DW1T1G | onsemi | SOT-363 | 810 | $ 0.0711 | ||
| UMD10N | JSCJ | SOT-363 | 0 | $ 0.0967 | ||
| PUMF11,115 | Nexperia | SOT-363 | 0 | $ 0.0478 | ||
| MUN5334DW1T1G | onsemi | SOT-363 | 0 | $ 0.1848 | ||
| RN4908,LXHF(CT | TOSHIBA | TSSOP-6(SC-88)SOT-363 | 0 | $ 0.1368 | ||
| NSVMUN5333DW1T3G | onsemi | SOT-363 | 0 | $ 0.1237 | ||
| DCX123JU-7-F | DIODES | SOT-363 | 0 | $ 0.1459 | ||
| NSVMUN5333DW1T1G | onsemi | SOT-363 | 0 | $ 0.0458 |