Infineon AUIRLU3114Z
| Manufacturer | |
| MPN | AUIRLU3114Z |
| LCSC Part # | C533501 |
| Packaging | TO-251D-3 |
| Customer # | |
| Key Attributes | 140W 40V 130A 2.5V 4.9mΩ@10V 1 N-channel N-Channel TO-251D-3 Single FETs, MOSFETs |
| Datasheet | Infineon AUIRLU3114Z |
| Alternative Parts | 4 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251D-3 | |
| Output Capacitance(Coss) | 650pF | |
| Pd - Power Dissipation | 140W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 4.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.81nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251D-3 | |
| Output Capacitance(Coss) | 650pF | |
| Pd - Power Dissipation | 140W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 4.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.81nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. Combined, these characteristics make this device a highly efficient and reliable solution for automotive and a wide variety of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.9076 | $ 0.91 |
| 200+ | $ 0.352 | $ 70.40 |
| 500+ | $ 0.3396 | $ 169.80 |
| 1,000+ | $ 0.3334 | $ 333.40 |
Standard Packaging3000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251D-3 | |
| Output Capacitance(Coss) | 650pF | |
| Pd - Power Dissipation | 140W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 4.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.81nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251D-3 | |
| Output Capacitance(Coss) | 650pF | |
| Pd - Power Dissipation | 140W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 130A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 350pF | |
| RDS(on) | 4.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.81nF | |
| Gate Charge(Qg) | 40nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Introduction
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche ratings. Combined, these characteristics make this device a highly efficient and reliable solution for automotive and a wide variety of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- Logic-level gate drive
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533501 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFU7440PBF | Infineon | IPAK | 99 | $ 1.5402 | ||
| NCE40H12I | NCE | TO-251 | 29 | $0.2590 $0.4316 | ||
| AUIRFU8403-701TRL | Infineon | TO-251-3 | 0 | $ 0.9829 | ||
| AUIRFU4104 | Infineon | TO-251-3-21 | 0 | $ 0.8502 |