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Modelos EDAEasyEDA
Infineon AUIRFR4105ZTRL
| Fabricante | |
| N.º de pieza fab. | AUIRFR4105ZTRL |
| Nº LCSC | C533341 |
| Emb. | DPAK |
| Número de Cliente | |
| Atrib. clave | 48W 55V 30A 4V 24.5mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS |
| Hoja de Datos | Infineon AUIRFR4105ZTRL |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Pd - Power Dissipation | 48W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 24.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Pd - Power Dissipation | 48W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 30A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 24.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descripción
Traducción por IA
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive applications and a wide variety of other applications.
Características
Traducción por IA
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive qualified
Agotado
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Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.0342 | $ 1.03 |
| 200+ | $ 0.4014 | $ 80.28 |
| 500+ | $ 0.3875 | $ 193.75 |
| 1,000+ | $ 0.3797 | $ 379.70 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Pd - Power Dissipation | 48W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 24.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Pd - Power Dissipation | 48W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 30A |
| Tipo | Descripción | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF | |
| RDS(on) | 24.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 740pF | |
| Gate Charge(Qg) | 27nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This HEXFET power MOSFET is designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive applications and a wide variety of other applications.
Características
Traducción por IA
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated up to maximum junction temperature Tjmax
- Lead-free, RoHS compliant
- Automotive qualified
C533341 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| VBE1615 | VBsemi Elec | TO-252 | 69 | $0.6056 $0.6374 | ||
| 30N06 | HANGYU MICROELECTRONICS | TO-252 | 2,485 | $ 0.0451 | ||
| 30N06 | SEP | TO-252 | 2,450 | $ 0.0862 | ||
| 30N06-TN3-R | UTC | TO-252 | 695 | $ 0.3135 | ||
| APG078N07K | ALLPOWER | TO-252 | 30 | $ 0.5061 | ||
| WSF80N06H | Winsok Semicon | TO-252 | 520 | $ 0.3486 | ||
| IRFR2407 | Infineon | TO-252AA | 1 | $ 0.6126 | ||
| IRFU4105ZPBF | Infineon | TO-252-2(DPAK) | 0 | $ 0.2655 | ||
| IPD30N06S3-24 | Infineon | TO-252-3 | 0 | $ 0.265 | ||
| AUIRFR2407TRL | Infineon | DPAK | 0 | $ 1.5451 |