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Infineon AUIRF1404
| Manufacturer | |
| MPN | AUIRF1404 |
| LCSC Part # | C533222 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 202A TO-220AB |
| Datasheet | Infineon AUIRF1404 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 202A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 333W | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.669nF | |
| Gate Charge(Qg) | 196nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 202A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 333W | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.669nF | |
| Gate Charge(Qg) | 196nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
AI Translation
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
In-Stock: 8
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.61$ 2.8157 | $ 2.82 |
Standard Packaging1000/Full Tube | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 202A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 333W | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.669nF | |
| Gate Charge(Qg) | 196nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 202A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 333W | |
| Reverse Transfer Capacitance (Crss@Vds) | 223pF | |
| RDS(on) | 3.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.669nF | |
| Gate Charge(Qg) | 196nC |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
AI Translation
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant Automotive Qualified
C533222 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRF1404PBF | Infineon | TO-220AB | 13,058 | $ 0.8653 | ||
| BSP10NH028SK1 | Bestirpower | TO-220 | 584 | $ 0.6113 | ||
| IPP052N06L3 G-VB | VBsemi Elec | TO-220AB | 18 | $1.2879 $1.5151 | ||
| IPP032N06N3G-VB | VBsemi Elec | TO-220AB | 16 | $1.2274 $1.4439 | ||
| PHP191NQ06LT-VB | VBsemi Elec | TO-220AB | 5 | $1.6139 $1.6988 | ||
| FDP036N10A(UMW) | UMW | TO-220 | 282 | $ 0.9887 | ||
| FTP03N06NA | IPS | TO-220 | 0 | $ 0.6633 | ||
| IRFB3306PBF-VB | VBsemi Elec | TO-220AB | 0 | $ 2.2219 | ||
| IRFB3206GPBF | Infineon | TO-220AB | 0 | $ 10.011 | ||
| JCS1404C | Jilin Sino-Microelectronics | TO-220 | 0 | $ 0.8205 |