- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
micron MT53E256M16D1FW-046 AIT:B
| Manufacturer | |
| MPN | MT53E256M16D1FW-046 AIT:B |
| LCSC Part # | C5330485 |
| Packaging | TFBGA-200(10x14.5) |
| Customer # | |
| Key Attributes | 4Gbit 2.133GHz LPDDR4 SDRAM TFBGA-200(10x14.5) Memory |
| Datasheet | micron MT53E256M16D1FW-046 AIT:B |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-200(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | |
| Refresh Current | 500uA | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.1V;272mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4 SDRAM |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-200(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function |
| Type | Description | |
|---|---|---|
| Refresh Current | 500uA | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.1V;272mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4 SDRAM |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal VDD2 = 1.06–1.17V; 1.10V nominal VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal
- Frequency range – 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.5 GB/s per die
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
- AEC-Q100
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 44.5463 | $ 44.55 |
| 30+ | $ 40.3793 | $ 1211.38 |
Standard Packaging1360/Full Tray | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-200(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function | |
| Refresh Current | 500uA | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.1V;272mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4 SDRAM |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | TFBGA-200(10x14.5) | |
| Operating Temperature | -40℃~+95℃ | |
| Features | Auto self-refresh;Built-in temperature sensor;Auto precharge function;Write leveling function;ZQ calibration function |
| Type | Description | |
|---|---|---|
| Refresh Current | 500uA | |
| Memory Size | 4Gbit | |
| Voltage - Supply | 1.1V;272mA | |
| Clock Frequency | 2.133GHz | |
| Memory Format | LPDDR4 SDRAM |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Ultra-low-voltage core and I/O power supplies – VDD1 = 1.70 - 1.95V; 1.80V nominal VDD2 = 1.06–1.17V; 1.10V nominal VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal
- Frequency range – 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.5 GB/s per die
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- Programmable VSS (ODT) termination
- AEC-Q100
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| MT53E256M16D1DS-046 AAT:B | micron | Similar | 200-WFBGA (10x14.5) | 0 | $ 34.4429 | ||
| MT53E128M32D2DS-046 AAT:A TR | micron | Similar | 200-WFBGA (10x14.5) | 0 | $ 20.6835 | ||
| MT53E128M32D2DS-046 AUT:A TR | micron | Similar | 200-WFBGA (10x14.5) | 0 | $ 22.494 | ||
| D1621PM4CDGVI-U | Kingston | Similar | FBGA-200(10x14.5) | 0 | $ 189.6626 |