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DIODES DMT10H015LSS-13
| Manufacturer | |
| MPN | DMT10H015LSS-13 |
| LCSC Part # | C526581 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 8.3A SO-8 |
| Datasheet | DIODES DMT10H015LSS-13 |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 261pF | |
| Current - Continuous Drain(Id) | 8.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 261pF | |
| Current - Continuous Drain(Id) | 8.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize RDS(ON) while maintaining excellent switching performance. The device is ideal for notebook battery power management and load switching applications.
Features
AI Translation
- 100% UIS tested in production
- High conversion efficiency
- Low RDS(ON) — minimizes conduction losses
- Low input capacitance
- Fast switching speed
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 qualified, high reliability
Applications
AI Translation
- Laptop battery power management
- Load switch
- Backlight illumination
- Power management
- DC-DC converter
In-Stock: 1,618
1,618 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7751 | $ 0.78 |
| 10+ | $ 0.6528 | $ 6.53 |
| 30+ | $ 0.5924 | $ 17.77 |
| 100+ | $ 0.532 | $ 53.20 |
| 500+ | $ 0.4961 | $ 248.05 |
| 1,000+ | $ 0.4782 | $ 478.20 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 261pF | |
| Current - Continuous Drain(Id) | 8.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 261pF | |
| Current - Continuous Drain(Id) | 8.3A | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.67W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 12mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.871nF | |
| Gate Charge(Qg) | 33.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation N-channel enhancement-mode MOSFET is designed to minimize RDS(ON) while maintaining excellent switching performance. The device is ideal for notebook battery power management and load switching applications.
Features
AI Translation
- 100% UIS tested in production
- High conversion efficiency
- Low RDS(ON) — minimizes conduction losses
- Low input capacitance
- Fast switching speed
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "Green" device
- AEC-Q101 qualified, high reliability
Applications
AI Translation
- Laptop battery power management
- Load switch
- Backlight illumination
- Power management
- DC-DC converter
C526581 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BRCS4294SC | BLUE ROCKET | SOP-8 | 80 | $ 0.4637 | ||
| SI4190ADY-T1-GE3 | VISHAY | SOIC-8 | 128 | $ 1.7803 | ||
| NCEP092N10AS | NCE | SOP-8 | 2,678 | $ 0.9026 | ||
| CRSE120N10L2 | CRMICRO | SOIC-8 | 10 | $ 0.3774 | ||
| DOS11N10 | DOINGTER | SOP-8 | 2,995 | $ 0.167 | ||
| WSP10N10 | Winsok Semicon | SOP-8 | 2,465 | $ 0.2716 | ||
| SI4190BDY-T1-GE3 | VISHAY | SOIC-8 | 30 | $ 2.4841 | ||
| HSM0094 | HUASHUO | SOP-8 | 0 | $ 0.6856 | ||
| NCEP085N10AS | NCE | SOP-8 | 0 | $ 0.5579 | ||
| DMT10H014LSS-13 | DIODES | SO-8 | 0 | $ 1.1837 |