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HXY MOSFET SIHD240N65E-GE3-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SIHD240N65E-GE3-HXY |
| LCSC Part # | C52098435 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | 650V 20A 3.5V 52W 160mΩ@15V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs |
| Datasheet | HXY MOSFET SIHD240N65E-GE3-HXY |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High-speed switching and low capacitance
- High blocking voltage and low on-resistance
- Easy to drive and parallel
- Effectively reduces junction temperature and thermal resistance, high EMI immunity
- RoHS compliant
Applications
AI Translation
- Power factor correction modules
- Switch-mode power supplies
- Power inverters
- High-voltage DC/DC converters
Every Order Guarantee
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In-Stock: 25
25 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.9955$ 2.3964 | $ 2.40 |
| 10+ | $ 2.5703$ 2.0563 | $ 20.56 |
| 30+ | $ 2.318$ 1.8544 | $ 55.63 |
| 100+ | $ 2.0626$ 1.6501 | $ 165.01 |
| 500+ | $ 1.9452$ 1.5562 | $ 778.10 |
| 1,000+ | $ 1.8912$ 1.5130 | $ 1513.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-252-2L | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Standalone | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 20A | |
| Output Capacitance(Coss) | 18pF |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 160mΩ@15V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 208pF | |
| Gate Charge(Qg) | 10.6nC | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High-speed switching and low capacitance
- High blocking voltage and low on-resistance
- Easy to drive and parallel
- Effectively reduces junction temperature and thermal resistance, high EMI immunity
- RoHS compliant
Applications
AI Translation
- Power factor correction modules
- Switch-mode power supplies
- Power inverters
- High-voltage DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| FCD260N65S3-HXY | HXY MOSFET | Similar | TO-252-2L | 449 | $1.0635 $1.1194 | ||
| STD16N65M5-HXY | HXY MOSFET | Similar | TO-252-2L | 38 | $0.9575 $1.915 | ||
| IPD65R250C6XTMA1-HXY | HXY MOSFET | Similar | TO-252-2L | 47 | $1.4317 $1.507 | ||
| IPD65R190C7ATMA1-HXY | HXY MOSFET | Similar | TO-252-2L | 470 | $1.8792 $1.9781 | ||
| STD18N65M5-HXY | HXY MOSFET | Similar | TO-252-2L | 40 | $0.8132 $1.6263 |
5 more alternative parts.View all substitutes