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SSGSEMI SSB220
| Manufacturer | SSGSEMIAsian Brands |
| MPN | SSB220 |
| LCSC Part # | C49207752 |
| Packaging | SMB |
| Customer # | |
| Key Attributes | 1 Independent 200V 950mV@2A 2A SMB Single Diodes |
| Datasheet | SSGSEMI SSB220 |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | SSGSEMI | |
| Packaging | SMB | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | SSGSEMI | |
| Packaging | SMB | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
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Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0752 | $ 0.08 |
| 200+ | $ 0.03 | $ 6.00 |
| 500+ | $ 0.029 | $ 14.50 |
| 1,000+ | $ 0.0285 | $ 28.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | SSGSEMI | |
| Packaging | SMB | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | SSGSEMI | |
| Packaging | SMB | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+125℃ |
| Type | Description | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Voltage - Forward(Vf@If) | 950mV@2A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 45A | |
| Current - Rectified | 2A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |