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R+O HT06P460S
| Fabricant | R+OAsian Brands |
| Réf. Fab. | HT06P460S |
| Réf. LCSC | C49066909 |
| Condit. | SOT-223 |
| Numéro Client | |
| Caract. clés | MOSFET P-CH 60V 8A SOT-223 |
| Fiche Technique | R+O HT06P460S |
| Conformité RoHS | 1 documents disponibles |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | R+O | |
| Condit. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 37.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | R+O | |
| Condit. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 37.6nC@10V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
GT045N10Q utilizes advanced trench technology, featuring excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.
Caractéristiques
Traduction par IA
- Drain-Source Voltage (VDS) = -60 V
- Drain Current (ID) = -8 A
- On-Resistance (RDS(on)) < 46 mΩ at Gate-Source Voltage (VGS) = -10 V
- On-Resistance (RDS(on)) < 52 mΩ at Gate-Source Voltage (VGS) = -4.5 V
- High power and high current handling capability
- High-density cell design for ultra-low on-resistance (Rdson)
- Excellent package with superior thermal dissipation performance
Applications
Traduction par IA
- Battery protection
- Load switch
- Power management
En stock: 8,390
8,390 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 0.5015 | $ 0.50 |
| 10+ | $ 0.4081 | $ 4.08 |
| 30+ | $ 0.3688 | $ 11.06 |
| 100+ | $ 0.318 | $ 31.80 |
| 500+ | $ 0.2967 | $ 148.35 |
| 1,000+ | $ 0.2836 | $ 283.60 |
Boîtier Standard2500/Full Reel | ||
Meilleur prix pour une plus grande quantité ?
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | R+O | |
| Condit. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 37.6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | R+O | |
| Condit. | SOT-223 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 150pF | |
| Current - Continuous Drain(Id) | 8A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 26mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.15nF | |
| Gate Charge(Qg) | 37.6nC@10V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Description
Traduction par IA
GT045N10Q utilizes advanced trench technology, featuring excellent on-resistance RDS(ON) and low gate charge, making it suitable for a wide range of applications.
Caractéristiques
Traduction par IA
- Drain-Source Voltage (VDS) = -60 V
- Drain Current (ID) = -8 A
- On-Resistance (RDS(on)) < 46 mΩ at Gate-Source Voltage (VGS) = -10 V
- On-Resistance (RDS(on)) < 52 mΩ at Gate-Source Voltage (VGS) = -4.5 V
- High power and high current handling capability
- High-density cell design for ultra-low on-resistance (Rdson)
- Excellent package with superior thermal dissipation performance
Applications
Traduction par IA
- Battery protection
- Load switch
- Power management
C49066909 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |