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Taiwan Semiconductor BZT52B10S RRG
| Fabricante | Taiwan SemiconductorAsian Brands |
| N.º de pieza fab. | BZT52B10S RRG |
| Nº LCSC | C485479 |
| Emb. | SOD-323F |
| Número de Cliente | |
| Atrib. clave | DIODE ZENER 10V 200mW SOD-323F |
| Hoja de Datos | Taiwan Semiconductor BZT52B10S RRG |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 7 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | Taiwan Semiconductor | |
| Emb. | SOD-323F | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 180nA@7V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 9.8V~10.2V | |
| Zener Voltage(Nom) | 10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | Taiwan Semiconductor | |
| Emb. | SOD-323F | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 180nA@7V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 9.8V~10.2V | |
| Zener Voltage(Nom) | 10V |
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En stock: 10
10 En stock, envío inmediato
Mínimo: 10Múltiplo: 10Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 10+ | $ 0.038 | $ 0.38 |
| 100+ | $ 0.0303 | $ 3.03 |
| 300+ | $ 0.0265 | $ 7.95 |
| 3,000+ | $ 0.0236 | $ 70.80 |
| 6,000+ | $ 0.0213 | $ 127.80 |
| 9,000+ | $ 0.0202 | $ 181.80 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | Taiwan Semiconductor | |
| Emb. | SOD-323F | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 180nA@7V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 9.8V~10.2V | |
| Zener Voltage(Nom) | 10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Zener/Single Zener Diodes | |
| Fabricante | Taiwan Semiconductor | |
| Emb. | SOD-323F | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200mW | |
| Reverse Leakage Current (Ir) | 180nA@7V | |
| Impedance(Zzt) | 20Ω | |
| Zener Voltage(Range) | 9.8V~10.2V | |
| Zener Voltage(Nom) | 10V |
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C485479 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| BZT52B10S R9G | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0424 | ||
| UDZS10B | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0707 | ||
| UDZS10B R9G | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0386 | ||
| BZT52B9V1S R9G | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0409 | ||
| UDZS11B | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0707 | ||
| UDZS9V1B | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0707 | ||
| UDZS9V1B RRG | Taiwan Semiconductor | SOD-323F | 0 | $ 0.0425 |