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onsemi FDMC86520DC
| Manufacturer | |
| MPN | FDMC86520DC |
| LCSC Part # | C463464 |
| Packaging | PDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET 60V 40A PDFN-8(3.3x3.3) |
| Datasheet | onsemi FDMC86520DC |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 557pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 6.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 29nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 557pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 6.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 29nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process. Advancements in both silicon and Dual Cool package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
AI Translation
- Dual Cool Top Side Cooling PQFN package
- Max rDS(on)=6.3 mΩ at VGS=10 V, ID=17 A
- Max rDS(on)=8.7 mΩ at VGS=8 V, ID=14.5 A
- High performance technology for extremely low rDS(on)
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC Switch
- Motor Bridge Switch
- Synchronous Rectifier
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 4.3492 | $ 4.35 |
| 10+ | $ 4.2956 | $ 42.96 |
| 30+ | $ 4.2582 | $ 127.75 |
| 100+ | $ 3.8 | $ 380.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 557pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 6.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 29nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PDFN-8(3.3x3.3) | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 557pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 6.3mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.79nF | |
| Gate Charge(Qg) | 29nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-Channel MOSFET is produced using advanced PowerTrench process. Advancements in both silicon and Dual Cool package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Features
AI Translation
- Dual Cool Top Side Cooling PQFN package
- Max rDS(on)=6.3 mΩ at VGS=10 V, ID=17 A
- Max rDS(on)=8.7 mΩ at VGS=8 V, ID=14.5 A
- High performance technology for extremely low rDS(on)
- RoHS Compliant
Applications
AI Translation
- Primary DC-DC Switch
- Motor Bridge Switch
- Synchronous Rectifier
C463464 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BSZ039N06NS | Infineon | TSDSON-8(3.3x3.3) | 90 | $ 2.6108 | ||
| FDMC007N08LCDC | onsemi | PQFN-8(3.3x3.3) | 10 | $ 3.878 | ||
| CMSC100N10L | Cmos | DFN-8(3.3x3.3) | 200 | $0.2456 $0.2585 | ||
| SIS862DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 85 | $ 1.901 | ||
| CMSC080N06L | Cmos | DFN-8(3.3x3.3) | 200 | $0.2849 $0.2998 | ||
| CMSC130N10 | Cmos | DFN-8(3.3x3.3) | 480 | $0.2296 $0.2416 | ||
| FDMC007N08LC | onsemi | PQFN-8(3.3x3.3) | 9 | $ 6.0225 | ||
| CMSC055N06 | Cmos | DFN-8(3.3x3.3) | 75 | $0.3746 $0.3943 | ||
| DMT64M1LCG-7 | DIODES | VDFN3333-8 | 0 | $ 1.0852 | ||
| SISS32LDN-T1-GE3 | VISHAY | PowerPAK1212-8SH | 0 | $ 1.636 |