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ST STW50N65DM2AG
| Manufacturer | |
| MPN | STW50N65DM2AG |
| LCSC Part # | C457475 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 650V 38A 4V 300W 87mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet | ST STW50N65DM2AG |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 69nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 69nC@10V |
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Introduction
AI Translation
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast recovery diode series. It features extremely low recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- AEC-Q101 qualified
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protection
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 17.6126 | $ 17.61 |
| 10+ | $ 17.2974 | $ 172.97 |
Standard Packaging600/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 69nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| RDS(on) | 87mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.2nF | |
| Gate Charge(Qg) | 69nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast recovery diode series. It features extremely low recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
AI Translation
- AEC-Q101 qualified
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protection
Applications
AI Translation
- Switching applications
C457475 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMH65R090DT | Cmos | TO-247 | 180 | $2.3688 $2.4934 | ||
| BMW65N075UC1 | Bestirpower | TO247-3 | 48 | $ 2.4363 | ||
| NCE65TF099T | NCE | TO-247 | 639 | $ 3.2087 | ||
| MS38N65FCC | MASPOWER | TO-247 | 15 | $4.2652 $4.7391 | ||
| STW48N60DM2 | ST | TO-247 | 31 | $ 4.8463 | ||
| CI47N65D4 | Tokmas | TO-247 | 872 | $ 2.5398 | ||
| STWA48N60DM2 | ST | TO-247-3 | 0 | $ 19.1576 | ||
| FCH067N65S3-F155 | onsemi | TO-247-3 | 0 | $ 5.6317 | ||
| SC037N120J3 | DIYI Elec Tech | TO-247-3 | 0 | $ 10.1166 | ||
| TK065N65Z,S1F | TOSHIBA | TO-247 | 0 | $ 8.4998 |